Liquid chemical for forming water repellent protecting film, and process for cleaning wafers using the same

ABSTRACT

A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.

CLAIM OF PRIORITY

This application is a divisional of U.S. application Ser. No.13/458,119, filed Apr. 27, 2012, which issued as U.S. Pat. No. 9,349,582on May 24, 2016, which claims priority from Japanese patent applicationserial no. 2012-079864, filed Mar. 30, 2012, which claims priority fromJapanese patent application serial no. 2012-079211, filed Mar. 30, 2012,which claims priority from Japanese patent application serial no.2011-102115, filed Apr. 28, 2011, which claims priority form Japanesepatent application serial no. 2011-101351, filed Apr. 28, 2011, thedisclosures of which are expressly incorporated by reference herein.

BACKGROUND OF THE INVENTION

The present invention relates to a technique of cleaning a substrate (awafer) in semiconductor device fabrication or the like.

Semiconductor devices for use in networks or digital household electricappliances are desired to be further sophisticated, multifunctional, andlow in power consumption. Accordingly, the trend toward micro-patterningfor circuits has been developed. As the development of micro-patterningproceeds, a pattern collapse of the circuits has been becomingcontroversial. In semiconductor device fabrication, cleaning steps forthe purpose of removing particles and metallic impurities are frequentlyemployed, which results in a 30-40% occupation of the whole of asemiconductor fabrication process by the cleaning step. If the aspectratio of the pattern is increased with the trend toward micro-patterningof the semiconductor devices, the pattern is to collapse when agas-liquid interface passes through the pattern after cleaning orrinsing. This phenomenon is a pattern collapse.

In Patent Publication 1, there is disclosed a technique of changing acleaning liquid from water to 2-propanol before a gas-liquid interfacepasses through a pattern, as a method for suppressing the patterncollapse. However, it is said that there are some limitations, forexample, a limitation that an aspect ratio of a pattern adaptablethereto is not higher than 5.

Additionally, in Patent Publication 2, there is disclosed a techniquedirected toward a resist pattern, as a method for suppressing thepattern collapse. This is a method of suppressing the pattern collapseby decreasing a capillary force as much as possible.

However, the technique disclosed as above is directed toward the resistpattern and is for reforming a resist itself. Moreover, a treatmentagent can finally be removed together with the resist, so that it is notnecessary to estimate a process of removing it after drying; therefore,this technique cannot be applied to the present object.

Furthermore, Patent Publication 3 discloses a cleaning process forpreventing the pattern collapse, in which surface-reforming by oxidationor the like is conducted on a wafer surface provided to have an unevenpattern by a film containing silicon and a water repellent film isformed on the surface by using a water-soluble surfactant or a silanecoupling agent to reduce the capillary force.

Additionally, in Patent Publications 4 and 5, there is disclosed atechnique of preventing the pattern collapse by performing ahydrophobicity-providing treatment with use of a treatment liquidcontaining a silylation agent (represented byN,N-dimethylaminotrimethylsilane) and a solvent.

REFERENCES ABOUT PRIOR ART Patent Publication

Patent Publication 1: Japanese Patent Application Publication No.2008-198958

Patent Publication 2: Japanese Patent Application Publication No.5-299336

Patent Publication 3: Japanese Patent No. 4403202

Patent Publication 4: Japanese Patent Application Publication No.2010-129932

Patent Publication 5: International Application Publication No. 10/47196Pamphlet

SUMMARY OF THE INVENTION

The present invention relates to a technique for cleaning a substrate (awafer) in semiconductor device fabrication and the like, the objectiveof which is to enhance the production yield of devices having such acircuit pattern as to be particularly fine and high in aspect ratio. Thepresent invention particularly relates to a liquid chemical for forminga water repellent protecting film and for improving a cleaning stepwhich tends to induce a wafer having at its surface an uneven pattern tocause an uneven pattern collapse, and the like. Hitherto, there hasgenerally been used a wafer containing silicon element at its surface;however, a wafer (hereinafter, sometimes referred to as “a metal-basedwafer” or merely “a wafer”) that contains at least one kind of elementselected from the group consisting of titanium, tungsten, aluminum,copper, tin, tantalum and ruthenium has become used together with thediversification of the pattern. However, in a case of a wafer on which asufficient amount of reactive functional groups e.g. silanol groups doesnot exist, it is not possible to form a water repellent protecting filmfor preventing the pattern collapse even if the treatment liquid or thetreatment method discussed in Patent Publications 3 to 5 is employed,which is a problem in that the pattern collapse cannot be prevented.Moreover, the treatment liquid discussed in Patent Publications 3 to 5is a flammable liquid containing an organic solvent and therefore allowsof being improved in terms of safety or environmental burden. An objectof the present invention is to provide a liquid chemical for forming aprotecting film, the liquid chemical being for forming a water repellentprotecting film for improving a cleaning step which tends to induce thepattern collapse, by forming a water repellent protecting film at leaston the surfaces of recessed portions of a metal-based wafer so as toreduce an interaction between a liquid retained in the recessed portionsand the surfaces of the recessed portions.

Additionally, the present invention relates to a technique for cleaninga substrate (a wafer) in semiconductor device fabrication and the like,the objective of which is to enhance the production yield of deviceshaving such a circuit pattern as to be particularly fine and high inaspect ratio. The present invention particularly relates to a processfor cleaning a wafer, using a liquid chemical for forming a waterrepellent protecting film and for improving a cleaning step which tendsto induce a wafer having at its surface an uneven pattern to cause anuneven pattern collapse. In a case where the treatment liquid or thetreatment method discussed in Patent Publications 3 to 5 is employed,the treatment liquid absorbs moisture from the atmosphere (the outsideair) during a treatment. Moreover, since water or alcohol (e.g.2-propanol, iPA and the like) is used in the cleaning step, there is apossibility that the treatment liquid is brought into contact with ormixed with water or alcohol which possibility sometimes results inreduction of a water repellent performance of the treatment liquid.Accordingly, the treatment liquid has been in a situation to bediscarded without being recycled. Hence another object of the presentinvention is to provide a cleaning process which is able to economicallyclean a wafer by recycling a liquid chemical for forming a protectingfilm.

Means for Solving the Problem

The pattern collapse is to occur when an gas-liquid interface passesthrough the pattern at the time of drying a wafer. The reason thereforis said that a difference in height of residual liquid between a parthaving high aspect ratio and a part having low aspect ratio causes adifference in capillary force which acts on the pattern.

Accordingly, it is expected, by decreasing the capillary force, that thedifference in capillary force due to the difference in height ofresidual liquid is reduced thereby resolving the pattern collapse. Themagnitude of the capillary force is the absolute value of P obtained bythe equation as shown below. It is expected from this equation that thecapillary force can be reduced by decreasing γ or cos θ.P=2×γ×cos θ/S

(In the equation, γ represents the surface tension of a liquid retainedin the recessed portions, θ represents the contact angle of the liquidretained in the recessed portions to the surfaces of the recessedportions, and S represents the width of the recessed portions.)

First Aspect of the Present Invention

A first aspect of the present invention resides in a liquid chemical forforming a water repellent protecting film (hereinafter, sometimesreferred to as “a liquid chemical for forming a protecting film” ormerely “a liquid chemical”), the liquid chemical for forming a waterrepellent protecting film being for forming a water repellent protectingfilm (hereinafter, sometimes referred to as merely “a protecting film”)on a wafer having at its surface an uneven pattern and containing atleast one kind of element selected from the group consisting oftitanium, tungsten, aluminum, copper, tin, tantalum and ruthenium atsurfaces of recessed portions of the uneven pattern, the water repellentprotecting film being formed at least on the surfaces of the recessedportions, the liquid chemical being characterized by including:

a water repellent protecting film forming agent (hereinafter, sometimesreferred to as merely “a protecting film forming agent”); and

water,

wherein the water repellent protecting film forming agent is at leastone selected from compounds represented by the following general formula[1] and salt compounds thereof, and

wherein the concentration of the water relative to the total quantity ofa solvent contained in the liquid chemical is not smaller than 50 mass%.

(In the formula [1], R¹ represents a C₁-C₁₈ monovalent hydrocarbon groupthe hydrogen elements of which may partially or entirely be replacedwith a fluorine element(s). R² mutually independently represents amonovalent organic group having a C₁-C₁₈ hydrocarbon group the hydrogenelements of which may partially or entirely be replaced with a fluorineelement(s). “a” is an integer of from 0 to 2.)

By using the protecting film forming agent represented by theabove-mentioned general formula [1], it becomes possible to form a waterrepellent protecting film at least on the surfaces of the recessedportions of the metal-based wafer. In the protecting film forming agent,P—OH group and/or P═O group (hereinafter, these groups may genericallybe referred to as “a functional moiety”) have compatibility with asubstance including the above-mentioned metal elements. Incidentally,“having compatibility” means that Van der Waals force, a staticinteraction or the like acts between the surface of the substanceincluding the metal elements and the functional moiety of the protectingfilm forming agent thereby causing adsorption and/or that the surface ofthe substance is reacted with the functional moiety of the protectingfilm forming agent to build a chemical bond thereby causing adsorption.Additionally, R′ is a hydrophobic moiety of the protecting film formingagent; therefore, when the protecting film forming agent is adsorbed onthe metal elements of the metal-based wafer, hydrophobic moieties arearranged outward from the surface of the wafer thereby impartinghydrophobicity to the wafer surface.

The metal-based wafer is a wafer containing at least one kind of elementselected from the group consisting of titanium, tungsten, aluminum,copper, tin, tantalum and ruthenium at the surfaces of the recessedportions of the uneven pattern, preferably a wafer containing at leastone kind of element selected from the group consisting of titanium,aluminum and ruthenium, more preferably a wafer containing at least oneelement of titanium and ruthenium, and particularly preferably a wafercontaining titanium element. In a case of a wafer containing siliconelement at the surfaces of the recessed portions of the uneven pattern,there are a multitude of silanol groups (SiOH groups) on the surfaces.These silanol groups serve as reaction points to be reacted with asilane coupling agent, so that the water repellent protecting film caneasily be formed on the surfaces of the recessed portions. On the otherhand, in a case of the metal-based wafer, its surface has fewer reactionpoints such as the silanol groups and therefore it is difficult to formthe protecting film with a compound such as the silane coupling agent.Additionally, in the present invention, the wafer having at its surfacean uneven pattern means a wafer which is in a condition where the unevenpattern has already been formed on the surface by etching, imprint orthe like. Moreover, it is possible to adopt a wafer on which anotherprocess such as metal routing has been performed, as far as the waferhas an uneven pattern at its surface.

It is preferable that the water repellent protecting film forming agentis one having solubility in water. An excessively low solubility makesthe water repellent protecting film forming agent difficult to besufficiently contained in the liquid chemical for forming a waterrepellent protecting film, which is therefore not preferable. Meanwhile,an excessively high solubility tends to present a difficulty inimparting an enough water repellency to the surface of the metal-basedwafer, which is therefore not preferable. Accordingly, the solubility ofthe water repellent protecting film forming agent in water is preferablyfrom 5 to 100000 mass ppm, particularly preferably from 10 to 50000 massppm, and much more preferably from 15 to 10000 mass ppm.

Moreover, the water repellent protecting film forming agent ispreferably at least one selected from compounds represented by thefollowing general formula [2] and salt compounds thereof.

(In the formula [2], R³ represents a C₁-C₁₈ monovalent hydrocarbon groupthe hydrogen elements of which may partially or entirely be replacedwith a fluorine element(s).)

Furthermore, the water repellent protecting film forming agent is morepreferably a compound represented by the above general formula [2].

The liquid chemical for forming a protecting film, according to thepresent invention is used in such a manner as to substitute a cleaningliquid with the liquid chemical in a step for cleaning the metal-basedwafer. Additionally, the substituted liquid chemical may be substitutedwith another cleaning liquid.

While the cleaning liquid is substituted with the liquid chemical forforming a protecting film and the liquid chemical is retained at leastin the recessed portions of the uneven pattern as discussed above, theprotecting film is formed at least on the surfaces of the recessedportions of the uneven pattern. The protecting film of the presentinvention may not necessarily continuously be formed and may notnecessarily uniformly be formed. However, in order to impart moreexcellent water repellency, it is preferable to form the protecting filmcontinuously and uniformly.

In the present invention, the protecting film is a water repellentprotecting film which is formed at least on the surfaces of the recessedportions by retaining the liquid chemical for forming a protecting filmat least in the recessed portions at the time of cleaning themetal-based wafer. The water repellent protecting film is a film formedfrom the water repellent film forming agent and/or a reaction productthereof, and is a film that can reduce the wettability of the wafersurface, i.e., a film that can impart water repellency to the same. Inthe present invention, the water repellency means to decrease a surfaceenergy of a surface of an article thereby weakening the interaction suchas a hydrogen bond, intermolecular forces and the like between water orother liquid and the surface of the article (i.e., at the interface).The effect of reducing the interaction is particularly exhibited withwater, but the effect of reducing the interaction is exhibited also witha mixture liquid of water and a liquid other than water or with a liquidother than water. With such a reduction of the interaction, the contactangle of the liquid to the article surface can be increased.

A process for cleaning a wafer, according to the present invention is aprocess for cleaning a wafer having an uneven pattern at its surface,the wafer containing at least one kind of element selected from thegroup consisting of titanium, tungsten, aluminum, copper, tin, tantalumand ruthenium at surfaces of recessed portions of the uneven pattern,the process is characterized by including at least the steps of:

a water repellent protecting film forming step in which a liquidchemical for forming a protecting film is retained at least in therecessed portions of the uneven pattern;

a drying step in which a liquid is removed from the uneven pattern bydrying; and

a film removing step in which the protecting film is removed,

wherein the liquid chemical for forming a protecting film includes awater repellent protecting film forming agent and water,

wherein the water repellent protecting film forming agent is at leastone selected from compounds represented by the general formula [1] andsalt compounds thereof, and

wherein the concentration of the water relative to the total quantity ofa solvent contained in the liquid chemical is not smaller than 50 mass%.

In the present invention, the protecting film is formed at least on thesurfaces of the recessed portions of the uneven pattern when a liquid isremoved from or dried out of the recessed portions. Therefore, thecapillary force which acts on the recessed portions is so reduced thatthe pattern collapse becomes difficult to occur. Additionally, theprotecting film is to be removed after the drying step.

Further, the process preferably includes a water-based cleaning step inwhich a water-based cleaning liquid is retained at least in the recessedportions of the uneven pattern, the water-based cleaning step beingconducted earlier than the water repellent protecting film forming step.

Furthermore, in the cleaning process, it is preferable that the waterrepellent protecting film forming agent is at least one selected fromcompounds represented by the general formula [2] and salt compoundsthereof, and it is particularly preferable that the water repellentprotecting film forming agent is at least one selected from compoundsrepresented by the general formula [2].

Second Aspect of the Present Invention

A second aspect of the present invention resides in a process forcleaning a wafer having an uneven pattern at its surface, the wafercontaining at least one kind of element selected from the groupconsisting of titanium, tungsten, aluminum, copper, tin, tantalum andruthenium at surfaces of recessed portions of the uneven pattern(hereinafter, the wafer is sometimes referred to as “a metal-basedwafer” or merely “a wafer”), the process being characterized byincluding at least the steps of:

a water repellent protecting film forming step in which a liquidchemical (hereinafter, sometimes referred to as “a liquid chemical forforming a protecting film” or merely “a liquid chemical”) for forming awater repellent protecting film (hereinafter, the water repellentprotecting film is sometimes referred to as merely “a protecting film”)is provided at least to the recessed portions of the wafer to form awater repellent protecting film on the surfaces of the recessedportions, the liquid chemical containing a water repellent protectingfilm forming agent for forming a water repellent protecting film on thesurface of the wafer,

wherein an excess of the liquid chemical for forming a water repellentprotecting film which excess occurs during the water repellentprotecting film forming step, and/or a liquid chemical for forming awater repellent protecting film which liquid chemical has undergone thewater repellent protecting film forming step is recalled and recycled,and

wherein the water repellent protecting film forming agent is a compoundhaving no hydrolyzable functional group.

The metal-based wafer is a wafer containing at least one kind of elementselected from the group consisting of titanium, tungsten, aluminum,copper, tin, tantalum and ruthenium at the surfaces of the recessedportions of the uneven pattern, preferably a wafer containing at leastone kind of element selected from the group consisting of titanium,tungsten, aluminum and ruthenium, more preferably a wafer containing atleast one element of titanium, ruthenium and tungsten, and particularlypreferably a wafer containing titanium element. In a case of a wafercontaining silicon element at the surfaces of the recessed portions ofthe uneven pattern, there are a multitude of silanol groups (SiOHgroups) on the surfaces. These silanol groups serve as reaction pointsto be reacted with a silane coupling agent, so that the water repellentprotecting film can easily be formed on the surfaces of the recessedportions. On the other hand, in a case of the metal-based wafer, itssurface has fewer reaction points such as the silanol groups andtherefore it is difficult to form the protecting film with a compoundsuch as the silane coupling agent. Additionally, in the presentinvention, the wafer having at its surface an uneven pattern means awafer which is in a condition where the uneven pattern has already beenformed on the surface by etching, imprint or the like. Moreover, it ispossible to adopt a wafer on which another process such as metal routinghas been performed, as far as the wafer has an uneven pattern at itssurface.

The above-mentioned liquid chemical for forming a protecting film isused in such a manner as to substitute a cleaning liquid with the liquidchemical in a step for cleaning the metal-based wafer. Additionally, thesubstituted liquid chemical may be substituted with another cleaningliquid.

While the cleaning liquid is substituted with the liquid chemical forforming a protecting film and the liquid chemical is retained at leastin the recessed portions of the uneven pattern as discussed above, theprotecting film is formed at least on the surfaces of the recessedportions of the uneven pattern. The protecting film of the presentinvention may not necessarily continuously be formed and may notnecessarily uniformly be formed. However, in order to impart moreexcellent water repellency, it is preferable to form the protecting filmcontinuously and uniformly.

In the present invention, the protecting film is a water repellentprotecting film which is formed at least on the surfaces of the recessedportions by retaining the liquid chemical for forming a protecting filmat least in the recessed portions at the time of cleaning themetal-based wafer. The water repellent protecting film is a film formedfrom the water repellent film forming agent and/or a reaction productthereof, and is a film that can reduce the wettability of the wafersurface, i.e., a film that can impart water repellency to the same. Inthe present invention, the water repellency means to decrease a surfaceenergy of a surface of an article thereby weakening the interaction suchas a hydrogen bond, intermolecular forces and the like between water orother liquid and the surface of the article (i.e., at the interface).The effect of reducing the interaction is particularly exhibited withwater, but the effect of reducing the interaction is exhibited also witha mixture liquid of water and a liquid other than water or with a liquidother than water. With such a reduction of the interaction, the contactangle of the liquid to the article surface can be increased.

At the time of retaining the liquid chemical at least in the recessedportions of the uneven pattern, the liquid chemical is in contact withthe outside air, and therefore moisture is likely to be incorporatedinto the liquid chemical. The water repellent protecting film formingagent used in the present invention is a compound having no hydrolyzablefunctional group, so that hydrolysis due to the incorporated water doesnot occur and therefore the performances never be reduced. Hence theliquid chemical is able to maintain its performances even after thewater repellent protecting film forming step. Accordingly, an excess ofthe liquid chemical which excess occurs during the water repellentprotecting film forming step, and a liquid chemical that has undergonethe water repellent protecting film forming step can be recalled to berecycled.

A wafer formed having an uneven pattern at its surface is often cleanedat its surface with water and/or a cleaning liquid containing alcohol.In the case where the cleaning liquid used at this time is mixed with orbrought into contact with the liquid chemical when being substitutedwith the liquid chemical, the mixed amount is greater than that of thecase of being mixed with the liquid chemical from the outside air.Therefore, the process for cleaning a wafer, according to the presentinvention is particularly effective in a process including a step forcleaning the wafer surface with water and/or a cleaning liquidcontaining alcohol, before the water repellent protecting film formingstep.

Additionally, the water repellent protecting film forming agentcontained in the liquid chemical for forming a water repellentprotecting film used in the process for cleaning a wafer, according tothe present invention is preferably at least one selected from compoundsrepresented by the following general formulas [1] to [6] and saltcompounds thereof.

(In the formula [1], R¹ represents a C₁-C₁₈ monovalent hydrocarbon groupthe hydrogen elements of which may partially or entirely be replacedwith a fluorine element(s). R² mutually independently represents amonovalent organic group having a C₁-C₁₈ hydrocarbon group the hydrogenelements of which may partially or entirely be replaced with a fluorineelement(s). “a” is an integer of from 0 to 2.)

(In the formula [2], R³ represents a C₁-C₁₈ monovalent hydrocarbon groupthe hydrogen elements of which may partially or entirely be replacedwith a fluorine element(s). R⁴ represents a hydrogen group or a C₁-C₈monovalent hydrocarbon group the hydrogen elements of which maypartially or entirely be replaced with a fluorine element(s).)(R⁵)_(b)—NH_(3-b)  [3]

(In the formula [3], R⁵ mutually independently represents a C₁-C₁₈monovalent hydrocarbon group the hydrogen elements of which maypartially or entirely be replaced with a fluorine element(s). “b” is aninteger of from 1 to 3.)R⁶(X)_(c)  [4]

(In the formula [4], X mutually independently represents a mercaptogroup or aldehyde group. “c” is an integer of from 1 to 6. R⁶ representsa C₁-C₁₈ monovalent hydrocarbon group the hydrogen elements of which maypartially or entirely be replaced with a fluorine element(s), in whichthe “c” number of hydrogen element(s) or fluorine element(s) is replacedwith the X group.)

(In the formula [5], R⁷ represents a C₁-C₁₈ monovalent hydrocarbon groupthe hydrogen elements of which may partially or entirely be replacedwith a fluorine element(s).)

(In the formula [6], R⁸ represents a C₁-C₁₈ monovalent hydrocarbon groupthe hydrogen elements of which may partially or entirely be replacedwith a fluorine element(s).)

By using the protecting film forming agent represented by theabove-mentioned general formulas [1] to [6], it becomes possible to forma water repellent protecting film at least on the surfaces of therecessed portions of the metal-based wafer. In the protecting filmforming agent, P—OH group, P═O group, C(O)OR⁴ group, NH_(3-b) group, Xgroup, —CONHOH group and a group represented by the following formula[9] (hereinafter, these groups may generically be referred to as “afunctional moiety”) have compatibility with a substance including theabove-mentioned metal elements. Incidentally, “having compatibility”means that Van der Waals force, a static interaction or the like actsbetween the surface of the substance including the metal elements andthe functional moiety of the protecting film forming agent therebycausing adsorption and/or that the surface of the substance is reactedwith the functional moiety of the protecting film forming agent to builda chemical bond thereby causing adsorption. Additionally, R¹, R³, R⁵,R⁶, R⁷ and R⁸ are hydrophobic moieties of the protecting film formingagent; therefore, when the protecting film forming agent is adsorbed onthe metal elements of the metal-based wafer, the hydrophobic moietiesare arranged outward from the surface of the wafer thereby impartinghydrophobicity to the wafer surface.

In addition, the water repellent protecting film forming agent ispreferably at least one selected from compounds represented by thefollowing general formulas [7] and [8] and salt compounds thereof.

(In the formula [7], R⁹ represents a C₁-C₁₈ monovalent hydrocarbon groupthe hydrogen elements of which may partially or entirely be replacedwith a fluorine element(s).)R¹⁰—NH₂  [8]

(In the formula [8], R¹⁰ represents a C₁-C₁₈ monovalent hydrocarbongroup the hydrogen elements of which may partially or entirely bereplaced with a fluorine element(s).)

Effects of the Invention

The protecting film formed from the liquid chemical for forming aprotecting film, according to the present invention is excellent inwater repellency. Therefore, on a wafer having at its surface an unevenpattern and containing at least one kind of element selected from thegroup consisting of titanium, tungsten, aluminum, copper, tin, tantalumand ruthenium at surfaces of recessed portions of the uneven pattern,the film reduces the interaction between a liquid retained in therecessed portions and the surfaces of the recessed portions, therebyexhibiting the effect of preventing the pattern collapse. By using theliquid chemical, a cleaning step conducted in a process for producingthe wafer having at its surface an uneven pattern is improved withoutlowering throughput. Accordingly, the process for producing the waferhaving the uneven pattern at its surface, conducted with use of theliquid chemical for forming a protecting film according to the presentinvention, is excellent in productivity. Furthermore, in the liquidchemical for forming a protecting film according to the presentinvention, the concentration of water relative to the total quantity ofa solvent contained in the liquid chemical is not smaller than 50 mass%; therefore, in the case where a nonaqueous solvent is contained, itscontent is required only to be small (or not larger than 50 mass %relative to the total quantity of a solvent contained in the liquidchemical). Thus, the liquid chemical is a liquid chemical more excellentin safety and a liquid chemical lower in environmental burden.Furthermore, the liquid chemical for forming a protecting film,according to the present invention can be used repeatedly, so that awafer can be cleaned economically.

Additionally, in the process for cleaning a wafer according to thepresent invention, the liquid chemical for forming a water repellentprotecting film can be used repeatedly, so that it is possible to cleanthe wafer economically.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view showing one example of schematic perspective view of awafer 1 of which surface is made into a surface having an uneven pattern2.

FIG. 2 is a schematic view showing a part of a-a′ cross section of FIG.1.

FIG. 3 is a schematic view showing a condition in which a liquidchemical 8 for forming a protecting film is retained in recessedportions 4 in a cleaning step.

FIG. 4 is a schematic view showing a condition in which a liquid isretained in the recessed portions 4 formed having a protecting filmthereon.

DETAILED DESCRIPTION From the First Aspect of the Present Invention

First of all, the present invention will be discussed from the firstaspect.

Previous to conducting a surface treatment that employs a liquidchemical for forming a protecting film of the present invention,pretreatment steps are often performed in general, the pretreatmentsteps being exemplified by:

a pretreatment step 1 of making a wafer surface into a surface having anuneven pattern;

a pretreatment step 2 of cleaning the wafer surface by using awater-based cleaning liquid; and

a pretreatment step 3 of substituting the water-based cleaning liquidwith a cleaning liquid A different from the water-based cleaning liquid(hereinafter, the cleaning liquid A different from the water-basedcleaning liquid is sometimes referred to as merely “a cleaning liquidA”).

Incidentally, the pretreatment step 2 or the pretreatment step 3 may beskipped in some cases.

As a pattern-forming method in the pretreatment step 1, a resist isapplied to the wafer surface first of all. Thereafter, the resist isexposed through a resist mask, followed by conducting an etching removalon the exposed resist or an unexposed resist, thereby producing a resisthaving a desired uneven pattern. Additionally, the resist having anuneven pattern can be obtained also by pushing a mold having a patternonto the resist. Then, the wafer is subjected to etching. At this time,the parts of the wafer surface which corresponding to recessed portionsof a resist pattern are etched selectively. Finally, the resist isstripped off thereby obtaining a wafer having an uneven pattern.

By the above-mentioned pretreatment steps, it becomes possible to obtaina wafer (a metal-based wafer) having at its surface an uneven patternand containing at least one kind of element selected from the groupconsisting of titanium, tungsten, aluminum, copper, tin, tantalum andruthenium at surfaces of recessed portions of the uneven pattern. As themetal-based wafer, it is possible to cite: those obtained by coating asurface of a silicon wafer, a wafer formed of a plurality of componentsincluding silicon and/or silicon oxide (SiO₂), a silicon carbide wafer,a sapphire wafer, various compound semiconductor wafers, a plastic waferor the like with a layer formed of a matter containing at least one kindof element selected from the group consisting of titanium, tungsten,aluminum, copper, tin, tantalum and ruthenium (hereinafter, the matteris sometimes referred to as “metal-based matter”); those in which atleast one layer of a multilayer film formed on the wafer is a layerformed of the above-mentioned metal-based matter. The above-mentioneduneven pattern forming step is conducted on a layer including a layer ofthe metal-based matters. Additionally, there are included those in whichat least a part of the surfaces of the recessed portions, of the surfaceof at which the uneven pattern is formed, serves as the metal-basedmatter at the time of forming the uneven pattern.

The metal-based matter is exemplified by: a matter containing titaniumelement, such as titanium nitride, titanium oxide, titanium and thelike; a matter containing tungsten element, such as tungsten, tungstenoxide and the like; a matter containing aluminum element, such asaluminum, aluminum oxide and the like; a matter containing copperelement, such as copper, copper oxide and the like; a matter containingtin element, such as tin, tin oxide and the like; a matter containingtantalum element, such as tantalum, tantalum oxide, tantalum nitride andthe like; and a matter containing ruthenium element, such as ruthenium,ruthenium oxide and the like.

Additionally, also in a wafer formed of a plurality of componentsincluding the matter containing at least one kind of element of themetal-based elements, it is possible to form the protecting film on thesurface of the metal-based matter. Examples of the wafer formed of aplurality of components further include: those in which the metal-basedmatter is formed at least at a part of the surfaces of the recessedportions; and those in which at least a part of the surfaces of therecessed portions serves as the metal-based matter at the time offorming the uneven pattern. Incidentally, where the protecting film canbe formed by the liquid chemical of the present invention is at least ona surface of a portion of the metal-based matter, in the uneven pattern.Accordingly, the protecting film may be such as to be formed at least ona part of the surfaces of the recessed portions of the metal-basedwafer.

Incidentally, the liquid chemical for forming a protecting film,according to the present invention can easily form an excellent waterrepellent protecting film on the surface of an article containingtitanium element at its surface. Therefore, it is preferable that thewafer is a wafer having at its surface an uneven pattern and containingtitanium element at the surfaces of the recessed portions of the unevenpattern.

Examples of the water-based cleaning liquid used in the pretreatmentstep 2 are water and an aqueous solution obtained by mixing at least onekind of an organic solvent, hydrogen peroxide, ozone, acid, alkali andsurfactant with water (the aqueous solution having a water content ofnot less than 10 mass %, for example).

Furthermore, in the pretreatment step 2, substitution with thewater-based cleaning liquid may be conducted twice or more. Thewater-based cleaning liquids to be used in this case may be differentfrom each other.

If recessed portions have a small width and projected portions have alarge aspect ratio, and if the surface is cleaned with the water-basedcleaning liquid in the pretreatment step 2 and subsequently thewater-based cleaning liquid is removed by drying and the like or ifwater is removed by drying and the like after substituting thewater-based cleaning liquid with water, a pattern collapse is to easilyoccur. The uneven pattern is defined as shown in FIG. 1 and FIG. 2. FIG.1 is one example of a schematic perspective view of a wafer 1 of whichsurface is made into a surface having an uneven pattern 2. FIG. 2 showsa part of an a-a′ cross section in FIG. 1. A width 5 of recessedportions is defined by an interval between a projected portion 3 and theprojected portion 3, as shown in FIG. 2. The aspect ratio of projectedportions is expressed by dividing a height 6 of the projected portionsby a width 7 of the projected portions. The pattern collapse in thecleaning step is to easily occur when the recessed portions have a widthof not more than 70 nm, particularly not more than 45 nm and when theaspect ratio is not less than 4, particularly not less than 6.

In the present invention, a style for cleaning the wafer is notparticularly limited so long as the liquid chemical or the cleaningliquid can be retained at least in the recessed portions of the unevenpattern of the wafer. Examples of the style for cleaning the wafer are:a single cleaning style represented by spin cleaning where a generallyhorizontally held wafer is rotated and cleaned one by one whilesupplying a liquid to the vicinity of the center of the rotation; and abatch style where a plurality of wafer sheets are immersed in a cleaningbath to be cleaned. Incidentally, the form of the liquid chemical or thecleaning liquid at the time of supplying the liquid chemical or thecleaning liquid at least to the recessed portions of the uneven patternof the wafer is not particularly limited as far as it is in a conditionof liquid at time of being retained in the recessed portions, and isexemplified by liquid, vapor or the like.

The cleaning liquid A used in the pretreatment step 3 refers to anorganic solvent, a mixture of the organic solvent and a water-basedcleaning liquid, or a cleaning liquid into which at least one kind ofacid, alkali and surfactant is mixed with these.

The organic solvent, which serves as one preferable example of thecleaning liquid A, is exemplified by hydrocarbons, esters, ethers,ketones, halogen-element containing solvents, sulfoxide-based solvents,alcohols, polyalcohol derivatives, nitrogen element-containing solventsand the like.

Incidentally, it is preferable that the cleaning liquid A is an organicsolvent or a mixture liquid of water and an organic solvent in view ofthe cleanliness. Furthermore, it is preferable that the organic solventcontains a water-soluble organic solvent (a solubility of thewater-soluble organic solvent in water is preferably not smaller than 5mass parts by weight relative to 100 parts by weight of water) becauseit can be easily substituted for the water-based cleaning liquid.

Additionally, in the pretreatment step 3, substitution with the cleaningliquid A may be conducted twice or more. More specifically, thewater-based cleaning liquid used in the pretreatment step 2 may besubstituted with a first kind of cleaning liquid A and the first kind ofcleaning liquid A may successively be substituted with two or more kindsof cleaning liquids A different from the above-mentioned cleaning liquidA, and then the liquid chemical for forming a protecting film may besubstituted therefor.

Moreover, in a case where the water-based cleaning liquid used in thepretreatment step 2 can be substituted directly with the liquid chemicalfor forming a protecting film, substitution with the cleaning liquid A(the pretreatment step 3) may be omitted. Substitution with the cleaningliquid A can be omitted with ease because the liquid chemical forforming a protecting film of the present invention contains water, whichcan result in simplification of the process.

FIG. 3 is a schematic view showing a condition in which a liquidchemical 8 for forming a protecting film is retained in recessedportions 4 in a protecting film forming step. The wafer of the schematicview of FIG. 3 shows a part of the a-a′ cross section in FIG. 1. At thistime, a protecting film is formed on the surfaces of the recessedportions 4 thereby imparting water repellency to the surfaces.

A water repellent protecting film forming agent contained in the liquidchemical for forming a water repellent protecting film which liquidchemical is used in the process for cleaning a wafer of the presentinvention is at least one selected from compounds represented by thegeneral formula [1] and salt compounds thereof.

A hydrocarbon group contained in R² of the general formula [1] isexemplified by alkyl group, alkylene group, those in which hydrogenelements are partially or entirely substituted with a fluorineelement(s), and the like.

Additionally, it is preferable that the above-mentioned R² is —OR⁴ (R⁴is a C₁-C₁₈ hydrocarbon group). Additionally, it is preferable that R⁴has a carbon number of 1 to 8 and particularly 1 to 4, since a moreexcellent water repellency is imparted thereby. Moreover, R⁴ ispreferably a straight-chained alkyl group.

Furthermore, it is preferable that the water repellent protecting filmforming agent is at least one selected from compounds represented by thegeneral formula [2] and salt compounds thereof where “a” of the generalformula [1] is 2, in order to impart a better water repellency.

Examples of R¹ and R³ of the general formulas [1] and [2] are: alkylgroup; phenyl group; phenyl group the hydrogen element of which issubstituted with alkyl group; naphthyl group; these hydrocarbon groupswhose hydrogen elements are partially or entirely substituted with afluorine element(s); and the like.

Moreover, it is preferable that R¹ and R³ of the general formulas [1]and [2] have a carbon number of 2 to 16, particularly preferably 4 to 14and much more preferably 6 to 14, since a more excellent waterrepellency is imparted thereby. Additionally, the hydrocarbon group thehydrogen elements of which may partially or entirely be substituted witha fluorine element(s) is preferably alkyl group and particularlypreferably a straight-chained alkyl group. If the hydrocarbon group is astraight-chained alkyl group, hydrophobic moieties of the protectingfilm forming agent tend to be arranged perpendicularly to the surface ofthe protecting film at the time of forming the protecting film so as toenhance a water-repellency-imparting effect, which is therefore furtherpreferable. Moreover, R¹ and R³ of the general formulas [1] and [2]bring about a far better water repellency, so that these are preferablyhydrocarbon groups whose hydrogen elements are partially or entirely besubstituted with a fluorine element(s).

The protecting film forming agent may exist in the form of a saltcompound of a compound represented by the general formulas [1] and [2],for example, in the form of a salt such as ammonium salt, amine salt andthe like.

Furthermore, the protecting film forming agent contained in the liquidchemical for forming a protecting film preferably has a concentration of0.0005 to 2 mass % relative to the total quantity of the liquidchemical. A concentration of smaller than 0.0005 mass % tends to makethe water-repellency-imparting effect insufficient, while that of largerthan 2 mass % tends to be insoluble in a solvent contained in the liquidchemical. A concentration of 0.001 to 1 mass % is more preferable, and0.0015 to 0.8 mass % is particularly preferable.

Additionally, the liquid chemical for forming a protecting film maycontain a solvent other than water. Such a solvent can be exemplified byan organic solvent and can be used upon being mixed with water at aconcentration of not higher than a saturation solubility in water.

As the organic solvent, there can be adopted hydrocarbons, esters,ethers, ketones, halogen element-containing solvents, sulfoxide-basedsolvents, lactone-based solvents, carbonate-based solvents, alcohols,polyalcohol derivatives, nitrogen element-containing solvents, and amixture liquid of these. Examples of hydrocarbons are toluene, benzene,xylene, hexane, heptane, octane and the like. Examples of esters areethyl acetate, propyl acetate, butyl acetate, ethyl acetoacetate and thelike. Examples of ethers are diethyl ether, dipropyl ether, dibutylether, tetrahydrofuran, dioxane and the like. Examples of ketones areacetone, acetylacetone, methyl ethyl ketone, methyl propyl ketone,methyl butyl ketone, cyclohexanone and the like. Examples of the halogenelement-containing solvents are: perfluorocarbons such asperfluorooctane, perfluorononane, perfluorocyclopentane,perfluorocyclohexane, hexafluorobenzene and the like; hydrofluorocarbonssuch as 1,1,1,3,3-pentafluorobutane, octafluorocyclopentane,2,3-dihydrodecafluoropentane, ZEORORA-H (produced by ZEON CORPORATION)and the like; hydrofluoroethers such as methyl perfluoroisobutyl ether,methyl perfluorobutyl ether, ethyl perfluorobutyl ether, ethylperfluoroisobutyl ether, ASAHIKLIN AE-3000 (produced by Asahi Glass Co.,Ltd.), Novec HFE-7100, Novec HFE-7200, Novec 7300, Novec 7600 (any ofthese are produced by 3M Limited) and the like; chlorocarbons such astetrachloromethane and the like; hydrochlorocarbons such as chloroformand the like; chlorofluorocarbons such as dichlorodifluoromethane andthe like; hydrochlorofluorocarbons such as1,1-dicloro-2,2,3,3,3-pentafluoropropane,1,3-dichloro-1,1,2,2,3-pentafluoropropane,1-chloro-3,3,3-trifluoropropene, 1,2-dichloro-3,3,3-trifuoropropene andthe like; perfluoroethers; perfluoropolyethers; and the like. Examplesof the sulfoxide-based solvents are dimethyl sulfoxide and the like.Examples of the lactone-based solvents are γ-butyrolactone,γ-valerolactone, γ-hexanolactone, γ-heptanolactone, γ-octanolactone,γ-nonanolactone, γ-decanolactone, γ-undecanolactone, γ-dodecanolactone,δ-valerolactone, δ-hexanolactone, δ-octanolactone, δ-nonanolactone,δ-decanolactone, δ-undecanolactone, δ-dodecanolactone, ε-hexanolactoneand the like. Examples of the carbonate-based solvents are dimethylcarbonate, ethyl methyl carbonate, diethyl carbonate, propylenecarbonate and the like. Examples of alcohols are methanol, ethanol,propanol, butanol, ethylene glycol, diethylene glycol, 1,2-propanediol,1,3-propanediol, dipropylene glycol, 1,2-butanediol, 1,3-butanediol,1,4-butanediol, triethylene glycol, tripropylene glycol, tetraethyleneglycol, tetrapropylene glycol, glycerine and the like. Examples of thepolyalcohol derivatives are ethylene glycol monomethyl ether, ethyleneglycol monoethyl ether, ethylene glycol monopropyl ether, ethyleneglycol monobutyl ether, diethylene glycol monomethyl ether, diethyleneglycol monoethyl ether, diethylene glycol monopropyl ether, diethyleneglycol monobutyl ether, triethylene glycol monomethyl ether, triethyleneglycol monoethyl ether, triethylene glycol monopropyl ether, triethyleneglycol monobutyl ether, tetraethylene glycol monomethyl ether,tetraethylene glycol monoethyl ether, tetraethylene glycol monopropylether, tetraethylene glycol monobutyl ether, propylene glycol monomethylether, propylene glycol monoethyl ether, propylene glycol monopropylether, propylene glycol monobutyl ether, dipropylene glycol monomethylether, dipropylene glycol monoethyl ether, dipropylene glycol monopropylether, dipropylene glycol monobutyl ether, tripropylene glycolmonomethyl ether, tripropylene glycol monoethyl ether, tripropyleneglycol monopropyl ether, tripropylene glycol monobutyl ether,tetrapropylene glycol monomethyl ether, butylene glycol monomethylether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether,ethylene glycol dibutyl ether, ethylene glycol monomethyl ether acetate,ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl etheracetate, ethylene glycol diacetate, diethylene glycol dimethyl ether,diethylene glycol ethyl methyl ether, diethylene glycol diethyl ether,diethylene glycol butyl methyl ether, diethylene glycol dibutyl ether,diethylene glycol monomethyl ether acetate, diethylene glycol monoethylether acetate, diethylene glycol monobutyl ether acetate, diethyleneglycol diacetate, triethylene glycol dimethyl ether, triethylene glycoldiethyl ether, triethylene glycol dibutyl ether, triethylene glycolbutyl methyl ether, triethylene glycol monomethyl ether acetate,triethylene glycol monoethyl ether acetate, triethylene glycol monobutylether acetate, triethylene glycol diacetate, tetraethylene glycoldimethyl ether, tetraethylene glycol diethyl ether, tetraethylene glycoldibutyl ether, tetraethylene glycol monomethyl ether acetate,tetraethylene glycol monoethyl ether acetate, tetraethylene glycolmonobutyl ether acetate, tetraethylene glycol diacetate, propyleneglycol dimethyl ether, propylene glycol diethyl ether, propylene glycoldibutyl ether, propylene glycol monomethyl ether acetate, propyleneglycol monoethyl ether acetate, propylene glycol monobutyl etheracetate, propylene glycol diacetate, dipropylene glycol dimethyl ether,dipropylene glycol methyl propyl ether, dipropylene glycol diethylether, dipropylene glycol dibutyl ether, dipropylene glycol monomethylether acetate, dipropylene glycol monoethyl ether acetate, dipropyleneglycol monobutyl ether acetate, dipropylene glycol diacetate,tripropylene glycol dimethyl ether, tripropylene glycol diethyl ether,tripropylene glycol dibutyl ether, tripropylene glycol monomethyl etheracetate, tripropylene glycol monoethyl ether acetate, tripropyleneglycol monobutyl ether acetate, tripropylene glycol diacetate,tetrapropylene glycol dimethyl ether, tetrapropylene glycol monomethylether acetate, tetrapropylene glycol diacetate, butylene glycol dimethylether, butylene glycol monomethyl ether acetate, butylene glycoldiacetate, glycerine triacetate and the like. Examples of the nitrogenelement-containing solvents are formamide, N,N-dimethylformamide,N,N-dimethylacetamide, N-methyl-2-pyrrolidone, diethylamine,triethylamine, pyridine and the like.

With consideration given to a protecting film forming ability that theliquid chemical for forming a protecting film has, it is preferable thatthe solvent contained in the liquid chemical is water or a mixtureliquid obtained by mixing water with esters, ethers, ketones,polyalcohol derivatives having no hydroxyl group. Furthermore, withconsideration given to solubility in water, a solvent to be mixed withwater is preferably a polyalcohol derivative; it is particularlypreferable to use a polyalcohol derivative having no hydroxyl groupbecause of its good protecting film forming ability. Additionally,alcohols and the polyalcohol derivatives having hydroxyl group providethe protecting film forming agent with an excellent solubility. Whensuch a solvent is used as the solvent contained in the liquid chemical,therefore, the protecting film forming agent can be dissolved at a highconcentration. Since a liquid chemical having a good protecting filmforming ability can be thus easily obtained, such a solvent may be usedas the solvent contained in the liquid chemical.

A larger content of water in the liquid chemical tends to make theliquid chemical higher in flash point, which results in reduction of therisk. It is therefore particularly preferable that the concentration ofwater relative to the total quantity of the solvent contained in theliquid chemical is not lower than 60 mass %, much more preferably notlower than 70 mass %.

Additionally, in order to accelerate the formation of the protectingfilm by virtue of the protecting film forming agent, a catalyst may beadded to the liquid chemical for forming a protecting film. The amountof the addition of the catalyst is preferably 0.01 to 50 mass % relativeto the total quantity of 100 mass % of the protecting film formingagent.

When increasing the temperature of the liquid chemical for forming aprotecting film, the protecting film can be formed in a shorter time. Atemperature at which a uniform protecting film can be readily formed isnot lower than 10° C. and lower than the boiling point of the liquidchemical. Particularly, it is preferable to keep a temperature of notlower than 15° C. and not higher than a temperature 10° C. lower thanthe boiling point of the liquid chemical. It is preferable that thetemperature of the liquid chemical is kept at the above-mentionedtemperature while the liquid chemical is being retained at least in therecessed portions of the uneven pattern.

The liquid chemical for forming a protecting film, used in theprotecting film forming step may be reused in other subsequenttreatments for wafer. For example, in the case of the above-mentionedsingle cleaning style, a liquid chemical having been provided to a waferand then left the wafer is collected and can be reused in othersubsequent wafer treatments. Meanwhile, in the case of theabove-mentioned batch style, a batch of liquid chemical treatment isconducted in a treatment bath and then a wafer is taken out thereof,thereafter, a liquid chemical left in the treatment bath can be used fora subsequent batch.

Incidentally, a reusable liquid chemical may be reused upon beingpartially discarded or may be used with the addition of an additionalliquid chemical. Furthermore, the reusable liquid chemical may be usedupon performing a purification operation such as: removal of metalimpurities, for example, by an ion-exchange resin, distillation and thelike; removal of contaminants including particles etc., for example, byfiltration; and the like.

After the protecting film forming step, the liquid chemical retained atleast in the recessed portions of the uneven pattern may be substitutedwith a cleaning liquid different from the above-mentioned liquidchemical (hereinafter, this cleaning liquid different from theabove-mentioned liquid chemical is sometimes referred to as “a cleaningliquid B”) (hereinafter, this step is sometimes referred to as “asubsequent cleaning step”), and then may be brought into a drying step.Examples of the cleaning liquid B are: a water-based cleaning liquid, anorganic solvent; a mixture of the water-based cleaning liquid and theorganic solvent; those into which at least one kind of acid, alkali anda surfactant is mixed; these in which the protecting film forming agentused for the liquid chemical for forming a protecting film is containedat a concentration lower than that of the liquid chemical; and the like.From the viewpoint of removing particles and metal impurities, it ismore preferable that the cleaning liquid B is water, an organic solventor a mixture of water and the organic solvent.

Furthermore, in the subsequent cleaning step, substitution with thecleaning liquid B may be conducted twice or more. More specifically, theliquid chemical for forming a protecting film may be substituted with afirst kind of cleaning liquid B and the first kind of cleaning liquid Bmay successively be substituted with two or more kinds of cleaningliquids B different from the above-mentioned cleaning liquid B, followedby the drying step.

The organic solvent, which serves as one of the preferable examples ofthe cleaning liquid B, are exemplified by hydrocarbons, esters, ethers,ketones, halogen element-containing solvents, sulfoxide-based solvents,lactone-based solvents, carbonate-based solvents, alcohols, polyalcoholderivatives, nitrogen element-containing solvents and the like.

In addition, the protecting film formed on the wafer surface by theliquid chemical of the present invention is preferable when an organicsolvent is used as the cleaning liquid B since reduction of the waterrepellency by the subsequent cleaning step is little.

There is shown in FIG. 4 a schematic view showing a state where a liquidis retained in the recessed portions 4 provided with water repellency bythe liquid chemical for forming a protecting film. The wafer as shown inthe schematic view of FIG. 4 shows a part of the a-a′ cross section inFIG. 1. The surface formed having the uneven pattern is coated with aprotecting film 10 by the liquid chemical thereby being provided withwater repellency. Furthermore, the protecting film 10 is retained on thewafer surface even when the liquid 9 is removed from the uneven pattern.

When the protecting film 10 is formed at least on the surfaces of therecessed portions of the uneven pattern of the wafer by the liquidchemical for forming a protecting film, a contact angle of from 50 to130° is preferable on the assumption that water is retained on thesurfaces, because the pattern collapse becomes difficult to occurthereby. It is therefore particularly preferable that the contact angleis 65 to 115° because the pattern collapse becomes further difficult tooccur.

The subsequent cleaning step may be skipped if possible. If theconcentration of the content of the protecting film forming agent in theliquid chemical for forming a protecting film of the present inventionis within the above-mentioned range, residues of the protecting film aremade difficult to remain on the wafer surface after a film removingstep; therefore it is easy to skip the subsequent cleaning step, therebyallowing simplification of the process.

In the case of skipping the subsequent cleaning step, the higher thewater concentration in the liquid chemical for forming a protecting filmis, the larger the contact angle of the liquid chemical for forming aprotecting film to the surface obtained after forming a protecting filmbecomes. Hence the capillary force which is to act on the recessedportions can be easily decreased. As a result, the pattern collapsebecomes difficult to occur at the time of removing the liquid chemical,which is preferable. Accordingly, the concentration of water relative tothe total quantity of the solvent contained in the liquid chemical forforming a protecting film is preferably not lower than 80 mass %, morepreferably not lower than 90 mass %.

Then, as discussed in the drying step, there is conducted a step ofremoving a liquid from the uneven pattern by drying, the liquid beingretained in the recessed portions 4 on which the protecting film isformed by the liquid chemical. At this time, the liquid retained in therecessed portions may be the liquid chemical used in the protecting filmforming step, the cleaning liquid B used in the subsequent cleaningstep, or a mixture liquid of these. The mixture liquid is one in whichthe protecting film forming agent is contained in the liquid chemicalfor forming a protecting film at a concentration lower than that of theliquid chemical, and may be a liquid which is on the way to substitutionof the liquid chemical with the cleaning liquid B, or a mixture liquidobtained by previously mixing the protecting film forming agent with thecleaning liquid B. In view of the cleanliness of the wafer, there ispreferably used water, an organic solvent, or a mixture of water and theorganic solvent. Additionally, it is also possible to bring the cleaningliquid B retained on the unevenly patterned surface after once removingliquid from the unevenly patterned surface and to conduct dryingthereafter.

Incidentally, in a case of performing a cleaning treatment after asurface treatment with the liquid chemical (i.e. in a case of performingthe subsequent cleaning step), a time for this step, i.e. a time toretain the cleaning liquid B is preferably not shorter than 10 seconds,more preferably not shorter than 20 seconds from the viewpoint ofremoving particles and impurities from the unevenly patterned surface.In view of the effect of maintaining a water repellent performance ofthe protecting film formed on the unevenly patterned surface, the use ofan organic solvent as the cleaning liquid B is preferable because thewater repellency of the wafer surface is maintained even afterconducting the subsequent cleaning step. On the other hand, a too longtime for the subsequent cleaning step can reduce the productivity, andtherefore the time is preferably within 15 minutes.

Furthermore, since water has a large contact angle to the surfaceobtained after forming a protecting film, water is able to easilydecrease the capillary force which is to act on the recessed portions,which results in a lesser occurrence of the pattern collapse at the timeof removing the cleaning liquid B. It is therefore water may be used asthe cleaning liquid B.

In the drying step, a liquid retained on the uneven pattern is removedby drying. The drying is preferably conducted by a conventionally knowndrying method such as spin drying, IPA (2-propanol) steam drying,Marangoni drying, heating drying, blowing drying, warm air drying,vacuum drying and the like.

Then, as discussed in the film removing step, there is performed a stepof removing the protecting film. In the case of removing the waterrepellent protecting film, it is effective to cleave C—C bond and C—Fbond in the water repellent protecting film. A method therefor is notparticularly limited so long as it is possible to cleave theabove-mentioned bonds but exemplified by: irradiating the wafer surfacewith light; heating the wafer; exposing the wafer to ozone; irradiatingthe wafer surface with plasma; subjecting the wafer surface to coronadischarge; and the like.

In the case of removing the protecting film by light irradiation, it ispreferable to conduct an irradiation with ultraviolet rays having awavelength of shorter than 340 nm and 240 nm (corresponding to bondenergies of C—C bond and C—F bond in the protecting film, i.e., 83kcal/mol and 116 kcal/mol, respectively). As the light source therefor,there is used a metal halide lamp, a low-pressure mercury lamp, ahigh-pressure mercury lamp, an excimer lamp, a carbon arc or the like.In the case of the metal halide lamp, the intensity of the ultravioletirradiation is preferably not less than 100 mW/cm², particularlypreferably not less than 200 mW/cm², as a measurement value obtained bythe illuminance meter (Intensity meter UM-10 produced by Konica MinoltaSensing, Inc., Light-Receptor UM-360 [Peak sensitivity wavelength: 365nm, Measured wavelength range: 310 to 400 nm]). Incidentally, anirradiation intensity of less than 100 mW/cm² takes a long time toremove the protecting film. Additionally, in the case of thelow-pressure mercury lamp, the ultraviolet irradiation is performed withshorter wavelengths so that removal of the protecting film is achievedin a short time even if the intensity is low. This is thereforepreferable.

Additionally, in the case of removing the protecting film by lightirradiation, it is particularly preferable to generate ozone in parallelwith decomposing the components of the protecting film by ultravioletrays and then to induce oxidation-volatilization of the components ofthe protecting film by the ozone, since a treatment time is savedthereby. As the light source therefor, the low-pressure mercury lamp,the excimer lamp or the like is used. Moreover, the wafer may be heatedwhile being subjected to light irradiation.

In the case of heating the wafer, heating of the wafer is conducted at400 to 1000° C., preferably at 500 to 900° C. The heating time ispreferably kept from 10 seconds to 60 minutes, more preferably from 30seconds to 10 minutes. Additionally, this step may be conducted incombination with ozone exposure, plasma irradiation, corona discharge orthe like. Furthermore, the light irradiation may be conducted whileheating the wafer.

As the method for removing the protecting film by heating, there are amethod of bringing a wafer into contact with a heat source, a method ofbringing a wafer into a heated atmosphere such as a heat treatmentfurnace, and the like. The method of bringing a wafer into a heatedatmosphere can easily and uniformly provide the wafer surface withenergy for removing the protecting film even in a case where two or morewafers are subjected to a treatment. This method is operationallyconvenient, achieves the treatment within a short period of time and hashigh treatment ability. Therefore, this is an industrially advantageousmethod.

In the case of exposing the wafer to ozone, it is preferable to exposethe wafer surface to ozone generated by ultraviolet irradiation usingthe low-pressure mercury lamp, low-temperature discharge using highvoltages or the like. The wafer may be irradiated with light or heatedwhile being exposed to ozone.

In the film removing step, the protecting film formed on the wafersurface can be efficiently removed by combining the above-mentionedlight irradiation, heating, ozone exposure, plasma irradiation, coronadischarge and the like.

From the Second Aspect of the Present Invention

Next, the present invention will be discussed from the second aspect.

Previous to conducting a surface treatment that employs theabove-mentioned liquid chemical for forming a protecting film,pretreatment steps are often performed in general, the pretreatmentsteps being exemplified by:

a pretreatment step 1 of making a wafer surface into a surface having anuneven pattern;

a pretreatment step 2 of cleaning the wafer surface by using awater-based cleaning liquid; and

a pretreatment step 3 of substituting the water-based cleaning liquidwith a cleaning liquid A different from the water-based cleaning liquid(hereinafter, the cleaning liquid A different from the water-basedcleaning liquid is sometimes referred to as merely “a cleaning liquidA”).

Incidentally, the pretreatment step 2 or the pretreatment step 3 may beskipped in some cases.

As a pattern-forming method in the pretreatment step 1, a resist isapplied to the wafer surface first of all. Thereafter, the resist isexposed through a resist mask, followed by conducting an etching removalon the exposed resist or an unexposed resist, thereby producing a resisthaving a desired uneven pattern. Additionally, the resist having anuneven pattern can be obtained also by pushing a mold having a patternonto the resist. Then, the wafer is subjected to etching. At this time,the parts of the wafer surface which corresponding to recessed portionsof a resist pattern are etched selectively. Finally, the resist isstripped off thereby obtaining a wafer having an uneven pattern.

By the above-mentioned pretreatment steps, it becomes possible to obtaina wafer (a metal-based wafer) having at its surface an uneven patternand containing at least one kind of element selected from the groupconsisting of titanium, tungsten, aluminum, copper, tin, tantalum andruthenium at surfaces of recessed portions of the uneven pattern. As themetal-based wafer, it is possible to cite: those obtained by coating asurface of a silicon wafer, a wafer formed of a plurality of componentsincluding silicon and/or silicon oxide (SiO₂), a silicon carbide wafer,a sapphire wafer, various compound semiconductor wafers, a plastic waferor the like with a layer formed of a matter containing at least one kindof element selected from the group consisting of titanium, tungsten,aluminum, copper, tin, tantalum and ruthenium (hereinafter, the matteris sometimes referred to as “metal-based matter”); those in which atleast one layer of a multilayer film formed on the wafer is a layerformed of the above-mentioned metal-based matter. The above-mentioneduneven pattern forming step is conducted on a layer including a layer ofthe metal-based matters. Additionally, there are included those in whichat least a part of the surfaces of the recessed portions, of the surfaceof at which the uneven pattern is formed, serves as the metal-basedmatter at the time of forming the uneven pattern.

The metal-based matter is exemplified by: a matter containing titaniumelement, such as titanium nitride, titanium oxide, titanium and thelike; a matter containing tungsten element, such as tungsten, tungstenoxide and the like; a matter containing aluminum element, such asaluminum, aluminum oxide and the like; a matter containing copperelement, such as copper, copper oxide and the like; a matter containingtin element, such as tin, tin oxide and the like; a matter containingtantalum element, such as tantalum, tantalum oxide, tantalum nitride andthe like; and a matter containing ruthenium element, such as ruthenium,ruthenium oxide and the like.

Additionally, also in a wafer formed of a plurality of componentsincluding the matter containing at least one kind of element of themetal-based elements, it is possible to form the protecting film on thesurface of the metal-based matter. Examples of the wafer formed of aplurality of components further include: those in which the metal-basedmatter is formed at least at a part of the surfaces of the recessedportions; and those in which at least a part of the surfaces of therecessed portions serves as the metal-based matter at the time offorming the uneven pattern. Incidentally, where the protecting film canbe formed by the liquid chemical of the present invention is at least ona surface of a portion of the metal-based matter, in the uneven pattern.Accordingly, the protecting film may be such as to be formed at least ona part of the surfaces of the recessed portions of the metal-basedwafer.

Incidentally, the liquid chemical for forming a protecting film caneasily form an excellent water repellent protecting film on the surfaceof an article containing titanium element at its surface. Therefore, itis preferable that the wafer is a wafer having at its surface an unevenpattern and containing titanium element at the surfaces of the recessedportions of the uneven pattern.

Examples of the water-based cleaning liquid used in the pretreatmentstep 2 are water and an aqueous solution obtained by mixing at least onekind of an organic solvent, hydrogen peroxide, ozone, acid, alkali andsurfactant with water (the aqueous solution having a water content ofnot less than 10 mass %, for example).

Furthermore, in the pretreatment step 2, substitution with thewater-based cleaning liquid may be conducted twice or more. Thewater-based cleaning liquids to be used in this case may be differentfrom each other.

If recessed portions have a small width and projected portions have alarge aspect ratio, and if the surface is cleaned with the water-basedcleaning liquid in the pretreatment step 2 and subsequently thewater-based cleaning liquid is removed by drying and the like or ifwater is removed by drying and the like after substituting thewater-based cleaning liquid with water, a pattern collapse is to easilyoccur. The uneven pattern is defined as shown in FIG. 1 and FIG. 2. FIG.1 is one example of a schematic perspective view of a wafer 1 of whichsurface is made into a surface having an uneven pattern 2. FIG. 2 showsa part of an a-a′ cross section in FIG. 1. A width 5 of recessedportions is defined by an interval between a projected portion 3 and theprojected portion 3, as shown in FIG. 2. The aspect ratio of projectedportions is expressed by dividing a height 6 of the projected portionsby a width 7 of the projected portions. The pattern collapse in thecleaning step is to easily occur when the recessed portions have a widthof not more than 70 nm, particularly not more than 45 nm and when theaspect ratio is not less than 4, particularly not less than 6.

In the present invention, a style for cleaning the wafer is notparticularly limited so long as the liquid chemical or the cleaningliquid can be retained at least in the recessed portions of the unevenpattern of the wafer. Examples of the style for cleaning the wafer are:a single cleaning style represented by spin cleaning where a generallyhorizontally held wafer is rotated and cleaned one by one whilesupplying a liquid to the vicinity of the center of the rotation; and abatch style where a plurality of wafer sheets are immersed in a cleaningbath to be cleaned. Incidentally, the form of the liquid chemical or thecleaning liquid at the time of supplying the liquid chemical or thecleaning liquid at least to the recessed portions of the uneven patternof the wafer is not particularly limited as far as it is in a conditionof liquid at time of being retained in the recessed portions, and isexemplified by liquid, vapor or the like.

The cleaning liquid A used in the pretreatment step 3 refers to anorganic solvent, a mixture of the organic solvent and a water-basedcleaning liquid, or a cleaning liquid into which at least one kind ofacid, alkali and surfactant is mixed with these. Furthermore, it ispreferable to conduct a step of retaining the liquid chemical forforming a protecting film at least in the recessed portions of theuneven pattern (i.e. a water repellent protecting film forming step) bysubstituting the cleaning liquid A with the liquid chemical for forminga protecting film.

The organic solvent, which serves as one preferable example of thecleaning liquid A, is exemplified by hydrocarbons, esters, ethers,ketones, halogen-element containing solvents, sulfoxide-based solvents,alcohols, polyalcohol derivatives, nitrogen element-containing solventsand the like.

Incidentally, it is preferable that the cleaning liquid A is an organicsolvent or a mixture liquid of water and an organic solvent in view ofthe cleanliness. Furthermore, it is preferable that the organic solventcontains a water-soluble organic solvent (a solubility of thewater-soluble organic solvent in water is preferably not smaller than 5mass parts by weight relative to 100 parts by weight of water) becauseit can be easily substituted for the water-based cleaning liquid.

Additionally, in the pretreatment step 3, substitution with the cleaningliquid A may be conducted twice or more. More specifically, thewater-based cleaning liquid used in the pretreatment step 2 may besubstituted with a first kind of cleaning liquid A and the first kind ofcleaning liquid A may successively be substituted with two or more kindsof cleaning liquids A different from the above-mentioned cleaning liquidA, and then the liquid chemical for forming a protecting film may besubstituted therefor.

Moreover, in a case where the water-based cleaning liquid used in thepretreatment step 2 can be substituted directly with the liquid chemicalfor forming a protecting film, substitution with the cleaning liquid A(the pretreatment step 3) may be omitted.

Additionally, it is preferable that the process for cleaning a wafer,according to the present invention includes a step of cleaning the wafersurface with a cleaning liquid containing water and/or alcohol, as thepretreatment step 2 and/or the pretreatment step 3, earlier than thewater repellent protecting film forming step.

FIG. 3 is a schematic view showing a condition in which a liquidchemical 8 for forming a protecting film is retained in recessedportions 4 in a protecting film forming step. The wafer of the schematicview of FIG. 3 shows a part of the a-a′ cross section in FIG. 1. At thistime, a protecting film is formed on the surfaces of the recessedportions 4 thereby imparting water repellency to the surfaces.

A water repellent protecting film forming agent contained in the liquidchemical for forming a water repellent protecting film which liquidchemical is used in the process for cleaning a wafer of the presentinvention is preferably at least one selected from compounds representedby the general formulas [1] to [6] and salt compounds thereof.

A hydrocarbon group contained in R² of the general formula [1] isexemplified by alkyl group, alkylene group, those in which hydrogenelements are partially or entirely substituted with a fluorineelement(s), and the like.

Additionally, it is preferable that the above-mentioned R² is —OR¹¹ (R¹¹is a C₁-C₁₈ hydrocarbon group). Additionally, it is preferable that R¹¹has a carbon number of 1 to 8 and particularly 1 to 4, since a moreexcellent water repellency is imparted thereby. Moreover, R¹¹ ispreferably a straight-chained alkyl group.

Furthermore, it is particularly preferable that the water repellentprotecting film forming agent is at least one selected from: compoundsrepresented by the general formula [7] where “a” of the general formula[1] is 2 and the general formula [8] where “b” of the general formula[3] is 1; and salt compounds thereof, in order to impart a better waterrepellency.

Further, it is preferable that the water repellent protecting filmforming agent is at least one selected from compounds represented by thegeneral formulas [7] and [8].

Furthermore, the water repellent protecting film forming agent isparticularly preferably a compound represented by the general formula[7].

Examples of R¹, R³, R⁵, R⁶, R⁷, R⁸, R⁹ and R¹⁰ of the general formulas[1] to [8] are: alkyl group; phenyl group; phenyl group the hydrogenelement of which is substituted with alkyl group; naphthyl group; thesehydrocarbon groups whose hydrogen elements are partially or entirelysubstituted with a fluorine element(s); and the like.

Moreover, it is preferable that R¹, R³, R⁵, R⁶, R⁷, R⁸, R⁹ and Rill ofthe general formulas [1] to [8] have a carbon number of 2 to 16,particularly preferably 4 to 14 and much more preferably 6 to 14, sincea more excellent water repellency is imparted thereby. Additionally, thehydrocarbon group the hydrogen elements of which may partially orentirely be substituted with a fluorine element(s) is preferably alkylgroup and particularly preferably a straight-chained alkyl group. If thehydrocarbon group is a straight-chained alkyl group, hydrophobicmoieties of the protecting film forming agent tend to be arrangedperpendicularly to the surface of the protecting film at the time offorming the protecting film so as to enhance awater-repellency-imparting effect, which is therefore furtherpreferable. Moreover, R¹, R³, R⁵, R⁶, R⁷, R⁸, R⁹ and R¹⁰ of the generalformulas [1] to [8] bring about a far better water repellency, so thatthese are preferably hydrocarbon groups whose hydrogen elements arepartially or entirely be substituted with a fluorine element(s).

The protecting film forming agent may exist in the form of a saltcompound of a compound represented by the general formula [1], [2], [4],[5] or [7], for example, in the form of a salt such as ammonium salt,amine salt and the like. In addition, the protecting film forming agentmay exist in the form of a salt compound of a compound represented bythe general formula [3], [6] or [8], for example, in the form of a saltsuch as carbonate, hydrochloride, sulfate, phosphate and the like.

Furthermore, the protecting film forming agent contained in the liquidchemical for forming a protecting film preferably has a concentration of0.0005 to 2 mass % relative to the total quantity of 100 mass % of theliquid chemical. A concentration of smaller than 0.0005 mass % tends tomake the water-repellency-imparting effect insufficient, while that oflarger than 2 mass % tends to be insoluble in a solvent to be used forthe liquid chemical. A concentration of 0.001 to 1 mass % is morepreferable, and 0.0015 to 0.8 mass % is particularly preferable.

As the solvent used for the liquid chemical for forming a protectingfilm, there can be suitably adopted water, an organic solvent, and amixture liquid of water and an organic solvent. Preferable examples ofthe organic solvent are hydrocarbons, esters, ethers, ketones, halogenelement-containing solvents, sulfoxide-based solvents, lactone-basedsolvents, carbonate-based solvents, alcohols, polyalcohol derivatives,nitrogen element-containing solvents, and a mixture liquid of these.

As concrete examples of the organic solvent, it is possible to citethose discussed in the first aspect of the present invention.

Additionally, it is preferable to use a nonflammable one as a part orthe entire of the solvent since the liquid chemical for forming aprotecting film becomes nonflammable or increases in flash point therebyreducing the risk of the liquid chemical. Most of the halogenelement-containing solvents are nonflammable, so that such a halogenelement-containing nonflammable solvent can be preferably used as anonflammable organic solvent. Also, water can preferably be used as anonflammable solvent, too.

Additionally, most of the polyalcohol derivatives have a high flashpoint and therefore it is preferable to use these solvents because therisk of the liquid chemical for forming a protecting film can bereduced.

With consideration given to a protecting film forming ability that theliquid chemical for forming a protecting film has, it is preferable touse hydrocarbons, esters, ethers, ketones, polyalcohol derivativeshaving no hydroxyl group, water or a mixture liquid thereof, as thesolvent. Additionally, in consideration of substitutability with awater-based cleaning liquid, it is preferable to use polyalcoholderivatives having no hydroxyl group, water or a mixture liquid thereof.Additionally, alcohols and the polyalcohol derivatives having hydroxylgroup provide the protecting film forming agent with an excellentsolubility. When such a solvent is used as the solvent contained in theliquid chemical, therefore, the protecting film forming agent can bedissolved at a high concentration. Since a liquid chemical having a goodprotecting film forming ability can be thus easily obtained, such asolvent may be used as the solvent contained in the liquid chemical.

Additionally, in order to accelerate the formation of the protectingfilm by virtue of the protecting film forming agent, a catalyst may beadded to the liquid chemical for forming a protecting film. The amountof the addition of the catalyst is preferably 0.01 to 50 mass % relativeto the total quantity of 100 mass % of the protecting film formingagent.

When increasing the temperature of the liquid chemical for forming aprotecting film, the protecting film can be formed in a shorter time. Atemperature at which a uniform protecting film can be readily formed isnot lower than 10° C. and lower than the boiling point of the liquidchemical. Particularly, it is preferable to keep a temperature of notlower than 15° C. and not higher than a temperature 10° C. lower thanthe boiling point of the liquid chemical. It is preferable that thetemperature of the liquid chemical is kept at the above-mentionedtemperature while the liquid chemical is being retained at least in therecessed portions of the uneven pattern.

The liquid chemical for forming a protecting film, used in theprotecting film forming step is reused in other subsequent treatmentsfor wafer. For example, in the case of the above-mentioned singlecleaning style, a liquid chemical having been provided to a wafer andthen left the wafer is collected and can be reused in other subsequentwafer treatments. Meanwhile, in the case of the above-mentioned batchstyle, a batch of liquid chemical treatment is conducted in a treatmentbath and then a wafer is taken out thereof; thereafter, a liquidchemical left in the treatment bath can be used for a subsequent batch.

Incidentally, a liquid chemical to be reused may be used upon beingpartially discarded or may be used with the addition of an additionalliquid chemical. Furthermore, the reusable liquid chemical may be usedupon performing a purification operation such as: removal of watermolecules by an absorbent, i.e. a molecular sieve and the like,distillation and the like; removal of metal impurities, for example, byan ion-exchange resin, distillation and the like; removal ofcontaminants including particles etc., for example, by filtration; andthe like.

After the water repellent protecting film forming step, a liquid thatremains in the recessed portions of the wafer is removed by drying(hereinafter, this drying operation is sometimes referred to as “adrying step”).

After the protecting film forming step, the liquid chemical retained atleast in the recessed portions of the uneven pattern may be substitutedwith a cleaning liquid different from the above-mentioned liquidchemical (hereinafter, this cleaning liquid different from theabove-mentioned liquid chemical is sometimes referred to as “a cleaningliquid B”) (hereinafter, this step is sometimes referred to as “asubsequent cleaning step”), and then may be brought into a drying step.Examples of the cleaning liquid B are: a water-based cleaning liquid, anorganic solvent; a mixture of the water-based cleaning liquid and theorganic solvent; those into which at least one kind of acid, alkali anda surfactant is mixed; these in which the protecting film forming agentused for the liquid chemical for forming a protecting film is containedat a concentration lower than that of the liquid chemical; and the like.From the viewpoint of removing particles and metal impurities, it ismore preferable that the cleaning liquid B is water, an organic solventor a mixture of water and the organic solvent.

Furthermore, in the subsequent cleaning step, substitution with thecleaning liquid B may be conducted twice or more. More specifically, theliquid chemical for forming a protecting film may be substituted with afirst kind of cleaning liquid B and the first kind of cleaning liquid Bmay successively be substituted with two or more kinds of cleaningliquids B different from the above-mentioned cleaning liquid B, followedby the drying step.

The organic solvent, which serves as one of the preferable examples ofthe cleaning liquid B, are exemplified by hydrocarbons, esters, ethers,ketones, halogen element-containing solvents, sulfoxide-based solvents,lactone-based solvents, carbonate-based solvents, alcohols, polyalcoholderivatives, nitrogen element-containing solvents and the like.

In addition, the protecting film formed on the wafer surface by theliquid chemical of the present invention is particularly preferable whenan organic solvent is used as the cleaning liquid B since reduction ofthe water repellency by the subsequent cleaning step is little.

There is shown in FIG. 4 a schematic view showing a state where a liquidis retained in the recessed portions 4 provided with water repellency bythe liquid chemical for forming a protecting film. The wafer as shown inthe schematic view of FIG. 4 shows a part of the a-a′ cross section inFIG. 1. The surface formed having the uneven pattern is coated with aprotecting film 10 by the liquid chemical thereby being provided withwater repellency. Furthermore, the protecting film 10 is retained on thewafer surface even when the liquid 9 is removed from the uneven pattern.

When the protecting film 10 is formed at least on the surfaces of therecessed portions of the uneven pattern of the wafer by the liquidchemical for forming a protecting film, a contact angle of from 50 to130° is preferable on the assumption that water is retained on thesurfaces, because the pattern collapse becomes difficult to occurthereby. It is therefore particularly preferable that the contact angleis 65 to 115° because the pattern collapse becomes further difficult tooccur.

Then, as discussed in the drying step, there is conducted a step ofremoving a liquid from the uneven pattern by drying, the liquid beingretained in the recessed portions 4 on which the protecting film isformed by the liquid chemical. At this time, the liquid retained in therecessed portions may be the liquid chemical used in the protecting filmforming step, the cleaning liquid B used in the subsequent cleaningstep, or a mixture liquid of these. The mixture liquid is one in whichthe protecting film forming agent is contained in the liquid chemicalfor forming a protecting film at a concentration lower than that of theliquid chemical, and may be a liquid which is on the way to substitutionof the liquid chemical with the cleaning liquid B, or a mixture liquidobtained by previously mixing the protecting film forming agent with thecleaning liquid B. In view of the cleanliness of the wafer, there ispreferably used water, an organic solvent, or a mixture of water and theorganic solvent. Additionally, it is also possible to bring the cleaningliquid B retained on the unevenly patterned surface after once removingliquid from the unevenly patterned surface and to conduct dryingthereafter.

Incidentally, in a case of performing a cleaning treatment after asurface treatment with the liquid chemical (i.e. in a case of performingthe subsequent cleaning step), a time for this step, i.e. a time toretain the cleaning liquid B is not shorter than 5 seconds, preferablynot shorter than 10 seconds, more preferably not shorter than 20 secondsfrom the viewpoint of removing particles and impurities from theunevenly patterned surface. In view of the effect of maintaining a waterrepellent performance of the protecting film formed on the unevenlypatterned surface, the use of an organic solvent as the cleaning liquidB is preferable because the water repellency of the wafer surface ismaintained even after conducting the subsequent cleaning step. On theother hand, a too long time for the subsequent cleaning step can reducethe productivity, and therefore the time is preferably within 15minutes.

Furthermore, since water has a large contact angle to the surfaceobtained after forming a protecting film, water is able to easilydecrease the capillary force which is to act on the recessed portions,which results in a lesser occurrence of the pattern collapse at the timeof removing the cleaning liquid B. It is therefore water may be used asthe cleaning liquid B.

In the drying step, a liquid retained on the uneven pattern is removedby drying. The drying is preferably conducted by a conventionally knowndrying method such as spin drying, IPA (2-propanol) steam drying,Marangoni drying, heating drying, blowing drying, warm air drying,vacuum drying and the like.

After the drying step, the protecting film that remains on the wafersurface is removed (hereinafter, this removing operation is sometimesreffered to as “a film removing step”). In the case of removing thewater repellent protecting film, it is effective to cleave C—C bond andC—F bond in the water repellent protecting film. A method therefor isnot particularly limited so long as it is possible to cleave theabove-mentioned bonds but exemplified by: irradiating the wafer surfacewith light; heating the wafer; exposing the wafer to ozone; irradiatingthe wafer surface with plasma; subjecting the wafer surface to coronadischarge; and the like.

In the case of removing the protecting film by light irradiation, it ispreferable to conduct an irradiation with ultraviolet rays having awavelength of shorter than 340 nm and 240 nm (corresponding to bondenergies of C—C bond and C—F bond in the protecting film, i.e., 83kcal/mol and 116 kcal/mol, respectively). As the light source therefor,there is used a metal halide lamp, a low-pressure mercury lamp, ahigh-pressure mercury lamp, an excimer lamp, a carbon arc or the like.In the case of the metal halide lamp, the intensity of the ultravioletirradiation is preferably not less than 100 mW/cm², particularlypreferably not less than 200 mW/cm², as a measurement value obtained bythe illuminance meter (Intensity meter UM-10 produced by Konica MinoltaSensing, Inc., Light-Receptor UM-360 [Peak sensitivity wavelength: 365nm, Measured wavelength range: 310 to 400 nm]). Incidentally, anirradiation intensity of less than 100 mW/cm² takes a long time toremove the protecting film. Additionally, in the case of thelow-pressure mercury lamp, the ultraviolet irradiation is performed withshorter wavelengths so that removal of the protecting film is achievedin a short time even if the intensity is low. This is thereforepreferable.

Additionally, in the case of removing the protecting film by lightirradiation, it is particularly preferable to generate ozone in parallelwith decomposing the components of the protecting film by ultravioletrays and then to induce oxidation-volatilization of the components ofthe protecting film by the ozone, since a treatment time is savedthereby. As the light source therefor, the low-pressure mercury lamp,the excimer lamp or the like is used. Moreover, the wafer may be heatedwhile being subjected to light irradiation.

In the case of heating the wafer, heating of the wafer is conducted at400 to 1000° C., preferably at 500 to 900° C. The heating time ispreferably kept from 10 seconds to 60 minutes, more preferably from 30seconds to 10 minutes. Additionally, this step may be conducted incombination with ozone exposure, plasma irradiation, corona discharge orthe like. Furthermore, the light irradiation may be conducted whileheating the wafer.

As the method for removing the protecting film by heating, there are amethod of bringing a wafer into contact with a heat source, a method ofbringing a wafer into a heated atmosphere such as a heat treatmentfurnace, and the like. The method of bringing a wafer into a heatedatmosphere can easily and uniformly provide the wafer surface withenergy for removing the protecting film even in a case where two or morewafers are subjected to a treatment. This method is operationallyconvenient, achieves the treatment within a short period of time and hashigh treatment ability. Therefore, this is an industrially advantageousmethod.

In the case of exposing the wafer to ozone, it is preferable to exposethe wafer surface to ozone generated by ultraviolet irradiation usingthe low-pressure mercury lamp, low-temperature discharge using highvoltages or the like. The wafer may be irradiated with light or heatedwhile being exposed to ozone.

In the film removing step, the protecting film formed on the wafersurface can be efficiently removed by combining the above-mentionedlight irradiation, heating, ozone exposure, plasma irradiation andcorona discharge.

EXAMPLES

A technique of making a wafer surface into a surface having an unevenpattern and a technique of substituting a cleaning liquid retained atleast in recessed portions of the uneven pattern with other cleaningliquid have been variously studied as discussed in other literatures andthe like, and have already been established. Accordingly, in the presentinvention, evaluations concerning a liquid chemical for forming aprotecting film were mainly performed. Additionally, as apparent fromthe following equation, a pattern collapse greatly depends on thecontact angle of a cleaning liquid to the wafer surface, i.e. thecontact angle of a liquid drop and on the surface tension of thecleaning liquid.P=2×γ×cos θ/S

(In the equation, γ represents the surface tension of a liquid retainedin the recessed portions, θ represents the contact angle between theliquid retained in the recessed portions and the surfaces of therecessed portions, and S represents the widths of the recessedportions.)

In a case of a cleaning liquid retained in recessed portions 4 of anuneven pattern 2, the contact angle of a liquid drop and the capillaryforce acting on the recessed portions (which force is regarded as beingequal to the pattern collapse) are in correlation with each other, sothat it is also possible to derive the capillary force from the equationand the evaluations made on the contact angle of the liquid drop to aprotecting film 10. In Examples, water, which is representative of awater-based cleaning liquid, was used as the cleaning liquid. On theassumption that water is retained on the surface of the protecting film,the contact angle is preferably from 50 to 130° because the patterncollapse becomes difficult to occur, and more preferably from 65 to 115°because the pattern collapse becomes further difficult to occur.

However, in the case of a wafer having an unevenly patterned surface, itis not possible to exactly evaluate the contact angle of the protectingfilm 10 itself formed on the unevenly patterned surface.

An evaluation of the contact angle of waterdrop is conducted by droppingseveral microliters of waterdrop on a surface of a sample (a substrate)and then by measuring an angle formed between the waterdrop and thesubstrate surface, as discussed in JIS R 3257 (Testing method ofwettability of glass substrate surface). However, in the case of thewafer having a pattern, the contact angle is enormously large. This isbecause Wenzel's effect or Cassie's effect is caused so that an apparentcontact angle of the waterdrop is increased under the influence of asurface shape (roughness) of the substrate upon the contact angle.

In view of the above, in Example I that relates to the first aspect ofthe present invention, the liquid chemical is supplied onto a waferhaving a smooth surface to form a protecting film thereon, theprotecting film being regarded as the protecting film 10 formed on thesurface of a wafer 1 having at its surface an uneven pattern 2, therebyperforming various evaluations. In Example I, there were used as thewafer having a smooth surface: “a wafer having a titanium nitride film”formed of a silicon wafer having a smooth surface and having a titaniumnitride film thereon (this wafer is indicated in Tables by TiN); and “awafer having a ruthenium film” formed of a silicon wafer having a smoothsurface and having a ruthenium film thereon (this wafer is indicated inTables by Ru).

Example I

Details will be discussed below. Hereinafter, there will be discussed: amethod for evaluating a wafer to which a liquid chemical for forming aprotecting film is supplied; preparation of the liquid chemical forforming a protecting film; and results of evaluation made aftersupplying the liquid chemical for forming a protecting film to thewafer.

[Method for Evaluating Wafer to which Liquid Chemical for FormingProtecting Film is Provided]

As a method for evaluating a wafer to which a liquid chemical forforming a protecting film is provided, the following evaluations (1) to(3) were performed.

(1) Evaluation of Contact Angle of Protecting Film Formed on WaferSurface

About 2 μl of pure water was dropped on a surface of a wafer on which aprotecting film was formed, followed by measuring an angle (contactangle) formed between the waterdrop and the wafer surface by using acontact angle meter (produced by Kyowa Interface Science Co., Ltd.: CA-XModel). In this evaluation, a wafer whose protecting film has a contactangle within a range of from 50 to 130° was classified as an acceptableone.

(2) Removability of Protecting Film

Under the following conditions, a sample was irradiated with UV raysfrom a metal halide lamp for 2 hours, upon which an evaluation ofremovability of the protecting film at the film removing step was made.A sample on which waterdrop had a contact angle of not larger than 30°after the irradiation was classified as acceptable one.

-   -   Lamp: M015-L312 produced by EYE GRAPHICS CO., LTD. (Intensity:        1.5 kW)    -   Illuminance: 128 mW/cm² as a measurement value obtained under        the following conditions    -   Measuring Apparatus: Ultraviolet Intensity Meter (UM-10 produced        by Konica Minolta Sensing, Inc.)    -   Light-Receptor: UM-360 (Light-Receptive Wavelength: 310-400 nm,        Peak Wavelength: 365 nm)    -   Measuring Mode: Irradiance Measurement

(3) Evaluation of Surface Smoothness of Wafer after Removing ProtectingFilm

The surface was observed by atomic force microscope (produced by SeikoInstruments Inc.: SPI3700, 2.5 micrometer square scan). Then, there wasobtained a difference ΔRa (nm) in the centerline average surfaceroughness Ra (nm) of the surface of the wafer between before and afterthe cleaning. Incidentally, Ra is a three-dimensionally enlarged oneobtained by applying the centerline average roughness defined by JIS B0601 to a measured surface and is calculated as “an average value ofabsolute values of deviation from standard surface to designatedsurface” from the following equation.

${Ra} = \left. {\frac{1}{S_{0}}{\int_{Y_{T}}^{Y_{B}}\int_{X_{L}}^{X_{R}}}} \middle| {{F\left( {X,Y} \right)} - Z_{0}} \middle| \ {{dX}\ {dY}} \right.$

where X_(L) and X_(R) and Y_(B) and Y_(T) represent a measuring range inthe X coordinate and the Y coordinate, respectively. S₀ represents anarea on the assumption that the measured surface is ideally flat, and isa value obtained by (X_(R)—X_(L))×(Y_(B)—Y_(T)). Additionally, F(X,Y)represents the height at a measured point (X,Y). Z₀ represents theaverage height within the measured surface.

The Ra value of the wafer surface before the protecting film was formedthereon and the Ra value of the wafer surface after the protecting filmwas removed therefrom were measured. If a difference between them (ΔRa)was within ±1 nm, the wafer surface was regarded as not being eroded bythe cleaning and as not leaving residues of the protecting film thereon,and therefore classified as an acceptable one.

Example I-1 (1) Preparation of Liquid Chemical for Forming ProtectingFilm

A mixture of: 0.002 g of octadecylphosphonic acid [C₁₈H₃₇P(O)(OH)₂] thatserves as a water repellent protecting film forming agent; and 90 g ofwater and 9.998 g of propylene glycol monomethyl ether acetate(hereinafter referred to as “PGMEA”) both of which serve as a solventwas stirred for 18 hours thereby obtaining a liquid chemical for forminga protecting film, the liquid chemical having the concentration of theprotecting film forming agent (hereinafter referred to as “a protectingfilm forming agent concentration”) of 20 mass ppm relative to the totalquantity of the liquid chemical for forming a protecting film and theconcentration of water (hereinafter referred to as “a waterconcentration”) of 90 mass % relative to the total quantity of thesolvent contained in the liquid chemical for forming a protecting film.

(2) Cleaning of Wafer Having Titanium Nitride Film

As a pretreatment step 2, a wafer having a smooth titanium nitride film(a silicon wafer formed having on its surface a titanium nitride layerof 50 nm thickness) was immersed in 1 mass % aqueous hydrogen peroxidefor 1 minute, and then immersed in pure water for 1 minute. Furthermore,as a pretreatment step 3, the wafer was immersed in isopropyl alcohol(hereinafter referred to as “iPA”) for 1 minute.

(3) Surface Treatment of Surface of Wafer Having Titanium Nitride Film,Using Liquid Chemical for Forming Protecting Film

As a protecting film forming step, the wafer having the titanium nitridefilm was immersed in the liquid chemical for forming a protecting filmat 20° C. for 10 minutes, the liquid chemical having been prepared inthe above “(1) Preparation of Liquid Chemical for forming ProtectingFilm” section, thereby forming a protecting film on the wafer surface.Thereafter, the wafer having the titanium nitride film was immersed iniPA for 1 minute, as a subsequent cleaning step. Then, as a drying step,the wafer having the titanium nitride film was taken out of iPA,followed by spraying air thereon to remove iPA from the surface.

As a result of evaluating the obtained wafer having the titanium nitridefilm in a manner discussed in the above [Method for Evaluating Wafer towhich Liquid Chemical for forming Protecting Film is provided] section,a wafer in which an initial contact angle before the surface treatmentwas smaller than 10° was confirmed to have a contact angle of 106° afterthe surface treatment, as shown in Table 1. With this, it was confirmedthat a water-repellency-imparting effect was excellently exhibited.Additionally, the contact angle after UV irradiation was smaller than10°, which means that removal of the protecting film was achieved.Furthermore, the ΔRa value of the wafer after UV irradiation was within±0.5 nm, with which it was confirmed that the wafer was not eroded atthe time of cleaning and that residues of the protecting film did notremain after UV irradiation.

TABLE 1 Liquid chemical for Forming Protecting Film Protecting FilmSolvent Protecting Film Forming Agent Water Other Forming StepProtecting Film Concentration Concentration Than Temperature TimeForming Agent [mass ppm] [mass %] Water Wafer [° C.] [min] Example I-1C₁₈H₃₇P(O)(OH)₂ 20 90 PGMEA TiN 20 10 Example I-2 C₁₂H₂₅P(O)(OH)₂ 20 90PGMEA TiN 20 10 Example I-3 C₁₂H₂₅P(O)(OH)₂ 20 90 iPA TiN 20 10 ExampleI-4 C₁₂H₂₅P(O)(OH)₂ 20 100 — TiN 20 10 Example I-5 C₁₀H₂₁P(O)(OH)₂ 50 90PGMEA TiN 20 10 Example I-6 C₁₀H₂₁P(O)(OH)₂ 50 90 iPA TiN 20 10 ExampleI-7 C₁₀H₂₁P(O)(OH)₂ 50 100 — TiN 20 10 Example I-8 C₁₀H₂₁P(O)(OH)₂ 50100 — TiN 20 10 Example I-9 C₈H₁₇P(O)(OH)₂ 300 90 PGMEA TiN 20 10Example I-10 C₈H₁₇P(O)(OH)₂ 300 90 iPA TiN 20 10 Example I-11C₈H₁₇P(O)(OH)₂ 300 100 — TiN 20 10 Example I-12 C₈H₁₇P(O)(OH)₂ 300 100 —TiN 20 10 Example I-13 C₈H₁₇P(O)(OH)₂ 300 100 — TiN 70 10 Example I-14C₈H₁₇P(O)(OH)₂ 500 90 DGEEA TiN 20 10 Example I-15 C₈H₁₇P(O)(OH)₂ 500 90iPA TiN 20 10 Example I-16 C₈H₁₇P(O)(OH)₂ 500 100 — TiN 20 10 ExampleI-17 C₈H₁₇P(O)(OH)₂ 1000 90 PGMEA TiN 20 10 Example I-18 C₈H₁₇P(O)(OH)₂1000 90 DGEEA TiN 20 10 Example I-19 C₈H₁₇P(O)(OH)₂ 1000 90 iPA TiN 2010 Example I-20 C₈H₁₇P(O)(OH)₂ 1000 100 — TiN 20 10 Example I-21C₈H₁₇P(O)(OH)₂ 1000 100 — TiN 70 10 Example I-22 C₈H₁₇P(O)(OH)₂ 1500 90iPA TiN 20 10 Example I-23 C₈H₁₇P(O)(OH)₂ 1500 90 iPA TiN 20 10 ExampleI-24 C₆F₁₃—C₂H₄—P(O)(OH)₂ 100 90 iPA TiN 20 10 Example I-25C₆F₁₃—C₂H₄—P(O)(OH)₂ 100 100 — TiN 20 10 Example I-26C₆F₁₃—C₂H₄—P(O)(OH)₂ 100 100 — TiN 70 10 Example I-27C₆F₁₃—C₂H₄—P(O)(OH)₂ 100 100 — TiN 20 10 Example I-28C₆F₁₃—C₂H₄—P(O)(OH)₂ 100 100 — TiN 70 10 Example I-29C₆F₁₃—C₂H₄—P(O)(OH)₂ 300 80 DGEEA TiN 20 10 Example I-30C₆F₁₃—C₂H₄—P(O)(OH)₂ 300 80 PGME TiN 20 10 Example I-31C₆F₁₃—C₂H₄—P(O)(OH)₂ 300 80 iPA TiN 20 10 Example I-32C₆F₁₃—C₂H₄—P(O)(OH)₂ 300 80 iPA TiN 20 10 Example I-33C₆F₁₃—C₂H₄—P(O)(OH)₂ 300 80 iPA TiN 70 10 Example I-34C₆F₁₃—C₂H₄—P(O)(OH)₂ 300 100 — TiN 20 10 Example I-35C₆F₁₃—C₂H₄—P(O)(OH)₂ 500 70 DGEEA TiN 20 10 Example I-36C₆F₁₃—C₂H₄—P(O)(OH)₂ 500 70 PGME TiN 20 10 Example I-37C₆F₁₃—C₂H₄—P(O)(OH)₂ 500 70 iPA TiN 20 10 Subsequent Cleaning StepEvaluation Result Cleaning Contact Liquid for Initial Angle afterRemovability of Subsequent Contact Surface Protecting Film SurfaceCleaning Time Angle Treatment (Contact Angle Smoothness Step [min] [°][°] [°]) (Δ Ra [nm]) Example I-1 iPA 1 <10 106 <10 Within ±0.5 ExampleI-2 iPA 1 <10 98 <10 Within ±0.5 Example I-3 iPA 1 <10 90 <10 Within±0.5 Example I-4 iPA 1 <10 98 <10 Within ±0.5 Example I-5 iPA 1 <10 96<10 Within ±0.5 Example I-6 iPA 1 <10 84 <10 Within ±0.5 Example I-7 iPA1 <10 96 <10 Within ±0.5 Example I-8 — — <10 98 <10 Within ±0.5 ExampleI-9 iPA 1 <10 94 <10 Within ±0.5 Example I-10 iPA 1 <10 82 <10 Within±0.5 Example I-11 iPA 1 <10 94 <10 Within ±0.5 Example I-12 — — <10 94<10 Within ±0.5 Example I-13 — — <10 98 <10 Within ±0.5 Example I-14 iPA1 <10 98 <10 Within ±0.5 Example I-15 iPA 1 <10 90 <10 Within ±0.5Example I-16 — — <10 100 <10 Within ±0.5 Example I-17 iPA 1 <10 100 <10Within ±0.5 Example I-18 iPA 1 <10 100 <10 Within ±0.5 Example I-19 iPA1 <10 92 <10 Within ±0.5 Example I-20 — — <10 102 <10 Within ±0.5Example I-21 — — <10 104 <10 Within ±0.5 Example I-22 iPA 1 <10 94 <10Within ±0.5 Example I-23 — — <10 94 <10 Within ±0.5 Example I-24 iPA 1<10 108 <10 Within ±0.5 Example I-25 iPA 1 <10 108 <10 Within ±0.5Example I-26 iPA 1 <10 110 <10 Within ±0.5 Example I-27 — — <10 108 <10Within ±0.5 Example I-28 — — <10 110 <10 Within ±0.5 Example I-29 iPA 1<10 112 <10 Within ±0.5 Example I-30 iPA 1 <10 112 <10 Within ±0.5Example I-31 iPA 1 <10 110 <10 Within ±0.5 Example I-32 — — <10 110 <10Within ±0.5 Example I-33 — — <10 112 <10 Within ±0.5 Example I-34 iPA 1<10 112 <10 Within ±0.5 Example I-35 iPA 1 <10 112 <10 Within ±0.5Example I-36 iPA 1 <10 112 <10 Within ±0.5 Example I-37 iPA 1 <10 110<10 Within ±0.5

Examples I-2 to I-53

Upon suitably modifying the conditions employed in Example I-1 (i.e.,the protecting film forming agent, the protecting film forming agentconcentration, the solvent for the liquid chemical for forming aprotecting film, the temperature of the liquid chemical for forming aprotecting film, and the subsequent cleaning step), a surface treatmentwas conducted on wafers, followed by evaluation of these. The resultsare shown in Tables 1 and 2. Incidentally, Examples I-8, I-12, I-13,I-16, I-20, I-21, I-23, I-27, I-28, I-32, I-33, I-38, I-39, I-43, I-44,I-46, I-47 and I-49 to I-53 did not undergo the subsequent cleaningstep. In other words, the wafers having a titanium nitride film weretaken out of the liquid chemical after the water repellent protectingfilm forming step, followed by spraying air thereon to remove the liquidchemical from the surface.

Incidentally, in the Tables, “C₁₂H₂₅P(O)(OH)₂” means dodecylphosphonicacid. “C₁₀H₂₁P(O)(OH)₂” means decylphosphonic acid. “C₈H₁₇P(O)(OH)₂”means octylphosphonic acid. “C₆F₁₃—C₂H₄—P(O)(OH)₂” meansperfluorohexylethylphosphonic acid. “C₆H₃P(O)(OH)₂” meanshexylphosphonic acid. “C₄H₉P(O)(OH)₂” means butylphosphonic acid.“C₆H₅P(O)(OH)₂” means phenylphosphonic acid. Additionally, “DGEEA” meanscliethylene glycol monoethyl ether acetate. “PGME” means propyleneglycol monomethyl ether.

TABLE 2 Liquid chemical for Forming Protecting Film Protecting FilmSolvent Protecting Film Forming Agent Water Other Forming StepProtecting Film Concentration Concentration Than Temperature TimeForming Agent [mass ppm] [mass %] Water Wafer [° C.] [min] Example I-38C₆F₁₃—C₂H₄—P(O)(OH)₂ 500 70 iPA TiN 20 10 Example I-39C₆F₁₃—C₂H₄—P(O)(OH)₂ 500 70 iPA TiN 70 10 Example I-40C₆F₁₃—C₂H₄—P(O)(OH)₂ 1000 70 DGEEA TiN 20 10 Example I-41C₆F₁₃—C₂H₄—P(O)(OH)₂ 1000 70 PGME TiN 20 10 Example I-42C₆F₁₃—C₂H₄—P(O)(OH)₂ 1000 70 iPA TiN 20 10 Example I-43C₆F₁₃—C₂H₄—P(O)(OH)₂ 1000 70 iPA TiN 20 10 Example I-44C₆F₁₃—C₂H₄—P(O)(OH)₂ 1000 70 iPA TiN 70 10 Example I-45C₆F₁₃—C₂H₄—P(O)(OH)₂ 1500 70 iPA TiN 20 10 Example I-46C₆F₁₃—C₂H₄—P(O)(OH)₂ 1500 70 iPA TiN 20 10 Example I-47C₆F₁₃—C₂H₄—P(O)(OH)₂ 1500 70 iPA TiN 70 10 Example I-48 C₆H₁₃P(O)(OH)₂500 100 — TiN 20 10 Example I-49 C₆H₁₃P(O)(OH)₂ 500 100 — TiN 70 10Example I-50 C₄H₉P(O)(OH)₂ 500 100 — TiN 20 10 Example I-51C₄H₉P(O)(OH)₂ 500 100 — TiN 70 10 Example I-52 C₆H₆P(O)(OH)₂ 1000 100 —TiN 20 10 Example I-53 C₆H₆P(O)(OH)₂ 1000 100 — TiN 70 10 Example I-54C₁₈H₃₇P(O)(OH)₂ 20 90 PGMEA Ru 20 10 Example I-55 C₁₂H₂₆P(O)(OH)₂ 20 100— Ru 20 10 Example I-56 C₆F₁₃—C₂H₄—P(O)(OH)₂ 100 100 — Ru 20 10 ExampleI-57 C₆F₁₃—C₂H₄—P(O)(OH)₂ 100 100 — Ru 70 10 Example I-58C₆F₁₃—C₂H₄—P(O)(OH)₂ 500 70 iPA Ru 20 10 Example I-59C₆F₁₃—C₂H₄—P(O)(OH)₂ 1000 70 iPA Ru 20 10 Example I-60C₆F₁₃—C₂H₄—P(O)(OH)₂ 1000 70 iPA Ru 70 10 Example I-61C₆F₁₃—C₂H₄—P(O)(OH)₂ 1500 70 iPA Ru 20 10 Comparative (CH₃)₃SiN(CH₃)₂100 50 DGEEA TiN 20 10 Example I-1 Comparative (CH₃)₃SiN(CH₃)₂ 100 50DGEEA Ru 20 10 Example I-2 Subsequent Cleaning Step Evaluation ResultCleaning Contact Liquid for Initial Angle after Removability ofSubsequent Contact Surface Protecting Film Surface Cleaning Time AngleTreatment (Contact Angle Smoothness Step [min] [°] [°] [°]) (Δ Ra [nm])Example I-38 — — <10 110 <10 Within ±0.5 Example I-39 — — <10 112 <10Within ±0.5 Example I-40 iPA 1 <10 112 <10 Within ±0.5 Example I-41 iPA1 <10 112 <10 Within ±0.5 Example I-42 iPA 1 <10 110 <10 Within ±0.5Example I-43 — — <10 110 <10 Within ±0.5 Example I-44 — — <10 112 <10Within ±0.5 Example I-45 iPA 1 <10 110 <10 Within ±0.5 Example I-46 — —<10 110 <10 Within ±0.5 Example I-47 — — <10 112 <10 Within ±0.5 ExampleI-48 iPA 1 <10 88 <10 Within ±0.5 Example I-49 — — <10 90 <10 Within±0.5 Example I-50 — — <10 64 <10 Within ±0.5 Example I-51 — — <10 70 <10Within ±0.5 Example I-52 — — <10 62 <10 Within ±0.5 Example I-53 — — <1064 <10 Within ±0.5 Example I-54 iPA 1 <10 72 <10 Within ±0.5 ExampleI-55 iPA 1 <10 64 <10 Within ±0.5 Example I-56 iPA 1 <10 78 <10 Within±0.5 Example I-57 iPA 1 <10 98 <10 Within ±0.5 Example I-58 iPA 1 <10 80<10 Within ±0.5 Example I-59 iPA 1 <10 82 <10 Within ±0.5 Example I-60iPA 1 <10 100 <10 Within ±0.5 Example I-61 iPA 1 <10 84 <10 Within ±0.5Comparative iPA 1 <10 10 — — Example I-1 Comparative iPA 1 <10 16 — —Example I-2

Example I-54

As a pretreatment step 2, a wafer having a smooth ruthenium film (asilicon wafer formed having on its surface a ruthenium layer of 300 nmthickness) was immersed in 1 mass % aqueous ammonia for 1 minute, andthen immersed in pure water for 1 minute. Furthermore, as a pretreatmentstep 3, the wafer was immersed in iPA for 1 minute. The procedure ofExample I-1 was repeated with the exception that a protecting film wasformed on the surface of this wafer.

As a result of evaluating the wafer having a smooth ruthenium film onwhich the protecting film was formed, in a manner discussed in the above[Method for Evaluating Wafer to which Liquid Chemical for formingProtecting Film is provided] section, a wafer in which an initialcontact angle before the surface treatment was smaller than 10° wasconfirmed to have a contact angle of 72° after the surface treatment, asshown in Table 2. With this, it was confirmed that awater-repellency-imparting effect was exhibited. Additionally, thecontact angle after UV irradiation was smaller than 10°, which meansthat removal of the protecting film was achieved. Furthermore, the ΔRavalue of the wafer after UV irradiation was within ±0.5 nm, with whichit was confirmed that the wafer was not eroded at the time of cleaningand that residues of the protecting film did not remain after UVirradiation.

Examples I-55 to I-61

Upon suitably modifying the conditions employed in Example I-54 (i.e.,the protecting film forming agent, the protecting film forming agentconcentration, the solvent for the liquid chemical for forming aprotecting film, and the temperature of the liquid chemical for forminga protecting film), a surface treatment was conducted on wafers,followed by evaluation of these. The results are shown in Table 2.

Comparative Example I-1

First of all, a mixture of; 0.01 g of N,N-dimethylaminotrimethylsilane[(CH₃)₃SiN(CH₃)₂] that is a silane coupling agent and serves as aprotecting film forming agent; and 50 g of water and 49.99 g of DGEEAboth of which serve as a solvent was stirred for 18 hours therebyobtaining a liquid chemical for forming a protecting film, the liquidchemical having a protecting film forming agent concentration of 100mass ppm and a water concentration of 50 mass %. Then, cleaning and asurface treatment were conducted on a wafer having a titanium nitridefilm, by the same method as Example I-1. From the evaluation results asshown in Table 2, it was confirmed that the contact angle after thesurface treatment was 10°. The water-repellency-imparting effect wastherefore not observed.

Comparative Example I-2

With use of the liquid chemical for forming a protecting film ofComparative Example I-1, cleaning and a surface treatment were conductedon a wafer having a ruthenium film, by the same method as Example I-54.From the evaluation results as shown in Table 2, it was confirmed thatthe contact angle after the surface treatment was 16°. Thewater-repellency-imparting effect was therefore not observed.

In Example II that relates to the second aspect of the presentinvention, the liquid chemical is supplied onto a wafer having a smoothsurface to form a protecting film thereon, the protecting film beingregarded as the protecting film 10 formed on the surface of a wafer 1having at its surface an uneven pattern 2, thereby performing variousevaluations. In Example II, there were used as the wafer having a smoothsurface: “a wafer having a titanium nitride film” formed of a siliconwafer having a smooth surface and having a titanium nitride film thereon(this wafer is indicated in Tables by TiN); “a wafer having a tungstenfilm” formed of a silicon wafer having a smooth surface and having atungsten film thereon (this wafer is indicated in Tables by W); and “awafer having a ruthenium film” formed of a silicon wafer having a smoothsurface and having a ruthenium film thereon (this wafer is indicated inTables by Ru).

Example II

Details will be discussed below. Hereinafter, there will be discussed: amethod for evaluating a contact angle of a protecting film formed on awafer; preparation of a liquid chemical for forming a protecting film;and results of evaluation made after supplying the liquid chemical forforming a protecting film to the wafer.

[Evaluation of Contact Angle of Protecting Film Formed on Wafer Surface]

About 2 μl of pure water was dropped on a surface of a wafer on which aprotecting film was formed, followed by measuring an angle (contactangle) formed between the waterdrop and the wafer surface by using acontact angle meter (produced by Kyowa Interface Science Co., Ltd.: CA-XModel). In this evaluation, a wafer whose protecting film has a contactangle within a range of from 50 to 130° was classified as an acceptableone.

Example II-1 (i-1) Preparation of Liquid Chemical for Forming ProtectingFilm

A mixture of: 0.002 g of octadecylphosphonic acid [C₁₈H₃₇P(O)(OH)₂] thatserves as a water repellent protecting film forming agent; and 99.998 gof propylene glycol monomethyl ether acetate (hereinafter referred to as“PGMEA”) that serve as a solvent was stirred for 18 hours therebyobtaining a liquid chemical for forming a protecting film, the liquidchemical having the concentration of the protecting film forming agent(hereinafter referred to as “a protecting film forming agentconcentration”) of 0.002 mass % relative to the total quantity of theliquid chemical for forming a protecting film.

(i-2) Cleaning of Wafer Having Titanium Nitride Film

As a pretreatment step 2, a wafer having a smooth titanium nitride film(a silicon wafer formed having on its surface a titanium nitride layerof 50 nm thickness) was immersed in 1 mass % aqueous hydrogen peroxidefor 1 minute, and then immersed in pure water for 1 minute. Furthermore,as a pretreatment step 3, the wafer was immersed in isopropyl alcohol(hereinafter referred to as “iPA”) for 1 minute.

(i-3) Surface Treatment of Surface of Wafer Having Titanium NitrideFilm, Using Liquid Chemical for Forming Protecting Film

As a protecting film forming step, the wafer having the titanium nitridefilm was immersed in the liquid chemical for forming a protecting filmat 20° C. for 10 minutes, the liquid chemical having been prepared inthe above “(i-1) Preparation of Liquid Chemical for forming ProtectingFilm” section, thereby forming a protecting film on the wafer surface.Through this operation, iPA was incorporated into the liquid chemicalfor forming a protecting film in an amount of 1 mass % relative to thetotal quantity of the liquid chemical for forming a protecting film.Thereafter, the wafer having the titanium nitride film was immersed iniPA for 10 seconds, as a subsequent cleaning step. Then, as a dryingstep, the wafer having the titanium nitride film was taken out of iPA,followed by spraying air thereon to remove iPA from the surface.

(i-4) Evaluation of Reusability

An operation where a surface treatment was conducted by immersing awafer in the liquid chemical for forming a protecting film which liquidchemical had undergone the above [(i-3) Surface Treatment of Surface ofWafer having Titanium Nitride Film, using Liquid Chemical for formingProtecting Film] section was carried out 4 times, the wafer being of abatch different from that used in (i-3). With this, iPA of 5 mass % intotal, relative to the total quantity of the liquid chemical for forminga protecting film, was incorporated into the liquid chemical for forminga protecting film.

As a result of evaluating the wafer having the titanium nitride filmwhich wafer was obtained upon being subjected to the surface treatmentin the first batch, in a manner discussed in the above [Evaluation ofContact Angle of Protecting Film formed on Wafer Surface] section, awafer in which an initial contact angle before the surface treatment wassmaller than 10° was confirmed to have a contact angle of 106° after thesurface treatment, as shown in Table 3. With this, it was confirmed thata water-repellency-imparting effect was excellently exhibited.Additionally, a wafer obtained upon being subjected to the surfacetreatment in the fifth batch had a contact angle of 106° and thereforeconfirmed to be reusable.

TABLE 3 Liquid Chemical for Forming Protecting Film Solvent ContactProtecting Film incorporated into Contact Angle after Forming AgentLiquid Chemical for Angle Surface Protecting Film Concentration Formingbefore Treatment [°] Forming Agent [mass %] Solvent Wafer ProtectingFilm Treatment [°] 1st Batch 5th Batch Example II-1 C₁₈H₃₇P(O)(OH)₂0.002 PGMEA TiN iPA <10 106 106 Example II-2 C₁₂H₂₅P(O)(OH)₂ 0.005 PGMEATiN Water <10 98 98 Example II-3 C₁₀H₂₁P(O)(OH)₂ 0.005 PGMEA TiN Water<10 96 96 Example II-4 C₁₀H₂₁P(O)(OH)₂ 0.005 iPA TiN Water <10 64 64Example II-5 C₁₀H₂₁P(O)(OH)₂ 0.005 Water TiN Water <10 96 96 ExampleII-6 C₈H₁₇P(O)(OH)₂ 0.03 PGMEA TiN Water <10 94 94 Example II-7C₈H₁₇P(O)(OH)₂ 0.03 iPA TiN Water <10 63 63 Example II-8 C₈H₁₇P(O)(OH)₂0.03 Water TiN Water <10 94 94 Example II-9 C₈H₁₇P(O)(OH)₂ 0.03 PGMEATiN iPA <10 94 90 Example II-10 C₈H₁₇P(O)(OH)₂ 0.03 iPA TiN iPA <10 6363 Example II-11 C₈H₁₇P(O)(OH)₂ 0.03 Water TiN iPA <10 94 94 ExampleII-12 C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 DGEEA TiN Water <10 108 108 ExampleII-13 C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 PGMEA TiN Water <10 108 108 ExampleII-14 C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 iPA TiN Water <10 96 96 Example II-15C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 Water TiN Water <10 110 110 Example II-16C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 DGEEA TiN iPA <10 108 102 Example II-17C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 PGMEA TiN iPA <10 108 104 Example II-18C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 iPA TiN iPA <10 96 96 Example II-19C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 Water TiN iPA <10 110 110 Example II-20C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 iPA TiN Water <10 100 100 Example II-21C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 DGEEA/iPA TiN Water <10 104 104 Example II-22C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 DGEEA/Water TiN Water <10 110 110 Example II-23C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 Water/PGME TiN Water <10 110 110 Example II-24C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 Water/iPA TiN Water <10 110 110 Example II-25C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 iPA TiN iPA <10 110 110 Example II-26C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 DGEEA/iPA TiN iPA <10 104 102 Example II-27C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 DGEEA/Water TiN iPA <10 110 108 Example II-28C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 Water/PGME TiN iPA <10 110 108 Example II-29C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 Water/iPA TiN iPA <10 110 108 Example II-30C₆H₁₃P(O)(OH)₂ 0.05 PGMEA TiN Water <10 88 88 Example II-31C₆H₁₃P(O)(OH)₂ 0.05 Water TiN Water <10 90 90 Example II-32C₆H₁₃P(O)(OH)₂ 0.05 PGMEA TiN iPA <10 88 82 Example II-33 C₆H₁₃P(O)(OH)₂0.05 Water TiN iPA <10 90 88 Example II-34 C₄H₉P(O)(OH)₂ 0.1 PGMEA TiNWater <10 64 64 Example II-35 C₆H₅P(O)(OH)₂ 0.1 PGMEA TiN Water <10 6262 Example II-36 C₁₄H₂₉NH₂ 0.1 PGMEA TiN iPA <10 88 88 Example II-37C₁₂H₂₅NH₂ 0.1 PGMEA TiN iPA <10 84 84 Example II-38 C₆F₁₃—C₂H₄—NH₂ 0.1PGMEA TiN Water <10 66 65 Example II-39 C₆F₁₃—C₂H₄—NH₂ 0.1 PGMEA TiN iPA<10 66 66 Example II-40 C₈H₁₇NH₂ 1 PGMEA TiN iPA <10 78 78

Examples II-2 to II-50

Upon suitably modifying the conditions employed in Example II-1 (i.e.,the cleaning liquid of the pretreatment 2 or 3 (the cleaning liquid isindicated in Tables by “a solvent incorporated into the liquid chemicalfor forming a protecting film”. The case where the solvent is watermeans that the pretreatment step 3 was not performed and that theprotecting film forming step was performed after the pretreatment step2), the protecting film forming agent, the protecting film forming agentconcentration, and the solvent for the liquid chemical for forming aprotecting film), a surface treatment was conducted on wafers, followedby evaluation of these. The results are shown in Tables 3 and 4.

TABLE 4 Liquid Chemical for Forming Protecting Film Solvent ContactProtecting Film incorporated into Contact Angle after Forming AgentLiquid Chemical for Angle Surface Protecting Film Concentration Formingbefore Treatment [°] Forming Agent [mass %] Solvent Wafer ProtectingFilm Treatment [°] 1st Batch 5th Batch Example II-41 C₈H₁₇NH₂ 1 iPA TiNiPA <10 80 80 Example II-42 C₈H₁₇NH₂ 1 DGEEA TiN iPA <10 80 80 ExampleII-43 C₈H₁₇NH₂ 1 DGEEA/Water TiN iPA <10 82 82 Example II-44 C₈H₁₇NH₂ 1PGMEA TiN Water <10 78 78 Example II-45 C₈H₁₇NH₂ 1 iPA TiN Water <10 8080 Example II-46 C₈H₁₇NH₂ 1 DGEEA TiN Water <10 80 80 Example II-47C₈H₁₇NH₂ 1 DGEEA/Water TiN Water <10 82 82 Example II-48 C₁₂H₂₅SH 1PGMEA TiN iPA <10 78 76 Example II-49 C₈H₁₇COOH 1 PGMEA TiN iPA <10 7676 Example II-50 C₈H₁₇COOH 1 PGMEA TiN Water <10 76 76 Example II-51C₁₈H₃₇P(O)(OH)₂ 0.002 PGMEA W iPA <10 68 68 Example II-52C₁₂H₂₅P(O)(OH)₂ 0.005 PGMEA W Water <10 60 60 Example II-53C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 PGMEA W Water <10 70 70 Example II-54C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 DGEEA W Water <10 70 70 Example II-55C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 DGEEA/iPA W Water <10 74 74 Example II-56C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 PGMEA W iPA <10 70 68 Example II-57C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 DGEEA W iPA <10 70 68 Example II-58C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 DGEEA/iPA W iPA <10 74 74 Example II-59C₁₄H₂₉NH₂ 0.1 PGMEA W iPA <10 84 84 Example II-60 C₁₂H₂₅NH₂ 0.1 PGMEA WiPA <10 80 80 Example II-61 C₆F₁₃—C₂H₄—NH₂ 0.1 PGMEA W Water <10 104 106Example II-62 C₆F₁₃—C₂H₄—NH₂ 0.1 PGMEA W iPA <10 104 104 Example II-63C₈H₁₇NH₂ 1 PGMEA W Water <10 70 70 Example II-64 C₈H₁₇NH₂ 1 iPA W Water<10 70 70 Example II-65 C₈H₁₇NH₂ 1 DGEEA W Water <10 70 70 Example II-66C₈H₁₇NH₂ 1 DGEEA/Water W Water <10 70 70 Example II-67 C₈H₁₇NH₂ 1 PGMEAW iPA <10 70 70 Example II-68 C₈H₁₇NH₂ 1 iPA W iPA <10 70 70 ExampleII-69 C₈H₁₇NH₂ 1 DGEEA W iPA <10 68 68 Example II-70 C₈H₁₇NH₂ 1DGEEA/Water W iPA <10 70 70 Example II-71 C₁₈H₃₇P(O)(OH)₂ 0.002 PGMEA RuiPA <10 72 70 Example II-72 C₁₂H₂₅P(O)(OH)₂ 0.005 PGMEA Ru Water <10 6462 Example II-73 C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 PGMEA Ru Water <10 78 74Example II-74 C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 DGEEA Ru Water <10 78 76 ExampleII-75 C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 Water Ru Water <10 60 60 Example II-76C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 DGEEA/iPA Ru Water <10 78 76 Example II-77C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 DGEEA/Water Ru Water <10 74 74 Example II-78C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 Water/iPA Ru Water <10 62 62 Example II-79C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 PGMEA Ru iPA <10 78 72 Example II-80C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 DGEEA Ru iPA <10 78 78

Incidentally, in the Tables, “C₁₂H₂₅P(O)(OH)₂” means dodecylphosphonicacid. “C₁₀H₂₁P(O)(OH)₂” means decylphosphonic acid. “C₈H₁₇P(O)(OH)₂”means octylphosphonic acid. “C₆F₁₃—C₂H₄—P(O)(OH)₂” meansperfluorohexylethylphosphonic acid. “C₆H₁₃P(O)(OH)₂” meanshexylphosphonic acid. “C₄H₉P(O)(OH)₂” means butylphosphonic acid.“C₆H₅P(O)(OH)₂” means phenylphosphonic acid. Furthermore, “C₁₄H₂₉NH₂”means tetradecylamine. “C₁₂H₂₅NH₂” means dodecylamine. “C₆F₁₃—C₂H₄—NH₂”means perfluorohexylethylamine. “C₈H₁₇NH₂” means octylamine. “C₁₂H₂₅SH”means dodecanethiol. “C₈H₁₇COOH” means nonanoic acid. Additionally,“DGEEA” means diethylene glycol monoethyl ether acetate. “DGEEA/iPA”means a solvent obtained by combining DGEEA and iPA at a mass ratio of95:5. “DGEEA/water” means a solvent obtained by combining DGEEA andwater at a mass ratio of 95:5. “Water/PGME” means a solvent obtained bycombining water and propylene glycol monomethyl ether at a mass ratio of70:30. “Water/iPA” means a solvent obtained by combining water and iPAat a mass ratio of 70:30.

Example II-51 (ii-1) Preparation of Liquid Chemical for FormingProtecting Film

A mixture of: 0.002 g of octadecylphosphonic acid [C₁₈H₃₇P(O)(OH)₂] thatserves as a water repellent protecting film forming agent; and 99.998 gof PGMEA that serves as a solvent was stirred for 18 hours therebyobtaining a liquid chemical for forming a protecting film, the liquidchemical having a protecting film forming agent concentration of 0.002mass %.

(ii-2) Cleaning of Wafer Having Tungsten Film

As a pretreatment step 2, a wafer having a smooth tungsten film (asilicon wafer formed having on its surface a tungsten layer of 50 nmthickness) was immersed in 1 mass % aqueous ammonia for 1 minute, andthen immersed in pure water for 1 minute. Furthermore, as a pretreatmentstep 3, the wafer was immersed in iPA for 1 minute.

(ii-3) Surface Treatment of Surface of Wafer Having Tungsten Film, UsingLiquid Chemical for Forming Protecting Film

As a protecting film forming step, the wafer having the tungsten filmwas immersed in the liquid chemical for forming a protecting film at 20°C. for 10 minutes, the liquid chemical having been prepared in the above“(ii-1) Preparation of Liquid Chemical for forming Protecting Film”section. Through this operation, iPA was incorporated into the liquidchemical for forming a protecting film in an amount of 1 mass % relativeto the total quantity of the liquid chemical for forming a protectingfilm. Thereafter, the wafer having the tungsten film was immersed in iPAfor 10 seconds, as a subsequent cleaning step. Then, as a drying step,the wafer having the tungsten film was taken out of iPA, followed byspraying air thereon to remove iPA from the surface.

(ii-4) Evaluation of Reusability

An operation where a surface treatment was conducted by immersing awafer in the liquid chemical for forming a protecting film which liquidchemical had undergone the above [(ii-3) Surface Treatment of Surface ofWafer having Tungsten Film, using Liquid Chemical for forming ProtectingFilm] section was carried out 4 times, the wafer being of a batchdifferent from that used in (ii-3). With this, iPA of 5 mass % in total,relative to the total quantity of the liquid chemical for forming aprotecting film, was incorporated into the liquid chemical for forming aprotecting film.

As a result of evaluating the wafer having the tungsten film which waferwas obtained upon being subjected to the surface treatment in the firstbatch, in a manner discussed in the above [Evaluation of Contact Angleof Protecting Film formed on Wafer Surface] section, a wafer in which aninitial contact angle before the surface treatment was smaller than 10°was confirmed to have a contact angle of 68° after the surfacetreatment, as shown in Table 4. With this, it was confirmed that awater-repellency-imparting effect was exhibited. Additionally, a waferobtained upon being subjected to the surface treatment in the fifthbatch had a contact angle of 68° and therefore confirmed to be reusable.

Examples II-52 to II-70

Upon suitably modifying the conditions employed in Example II-51 (i.e.,the cleaning liquid of the pretreatment 2 or 3, the protecting filmforming agent, the protecting film forming agent concentration, and thesolvent for the liquid chemical for forming a protecting film), asurface treatment was conducted on wafers, followed by evaluation ofthese. The results are shown in Table 4.

Example II-71

As a pretreatment step 2, a wafer having a smooth ruthenium film (asilicon wafer formed having on its surface a ruthenium layer of 300 nmthickness) was immersed in 1 mass % aqueous ammonia for 1 minute, andthen immersed in pure water for 1 minute. Furthermore, as a pretreatmentstep 3, the wafer was immersed in iPA for 1 minute. With use of thiswafer, a surface treatment was performed similarly to Example II-51.

As a result of evaluating the wafer having the ruthenium film whichwafer was obtained upon being subjected to the surface treatment in thefirst batch, in a manner discussed in the above [Evaluation of ContactAngle of Protecting Film formed on Wafer Surface] section, a wafer inwhich an initial contact angle before the surface treatment was smallerthan 10° was confirmed to have a contact angle of 72° after the surfacetreatment, as shown in Table 4. With this, it was confirmed that awater-repellency-imparting effect was exhibited. Additionally, a waferobtained upon being subjected to the surface treatment in the fifthbatch had a contact angle of 70° and therefore confirmed to be reusable.

Examples II-72 to II-96

Upon suitably modifying the conditions employed in Example II-71 (i.e.,the cleaning liquid of the pretreatment 2 or 3, the protecting filmforming agent, the protecting film forming agent concentration, and thesolvent for the liquid chemical for forming a protecting film), asurface treatment was conducted on wafers, followed by evaluation ofthese. The results are shown in Tables 4 and 5.

TABLE 5 Liquid Chemical for Forming Protecting Film Solvent ContactProtecting Film incorporated into Contact Angle after Forming AgentLiquid Chemical for Angle Surface Protecting Film Concentration Formingbefore Treatment [°] Forming Agent [mass %] Solvent Wafer ProtectingFilm Treatment [°] 1st Batch 5th Batch Example II-81C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.01 Water Ru iPA <10 60 60 Example II-82C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 DGEEA/iPA Ru iPA <10 78 78 Example II-83C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 DGEEA/Water Ru iPA <10 74 74 Example II-84C₆F₁₃—C₂H₄—P(O)(OH)₂ 0.1 Water/iPA Ru iPA <10 62 62 Example II-85C₁₄H₂₉NH₂ 0.1 PGMEA Ru iPA <10 96 96 Example II-86 C₁₂H₂₅NH₂ 0.1 PGMEARu iPA <10 94 94 Example II-87 C₆F₁₃—C₂H₄—NH₂ 0.1 PGMEA Ru Water <10 104104 Example II-88 C₆F₁₃—C₂H₄—NH₂ 0.1 PGMEA Ru iPA <10 104 104 ExampleII-89 C₈H₁₇NH₂ 1 PGMEA Ru Water <10 90 88 Example II-90 C₈H₁₇NH₂ 1 iPARu Water <10 92 90 Example II-91 C₈H₁₇NH₂ 1 DGEEA Ru Water <10 90 88Example II-92 C₈H₁₇NH₂ 1 DGEEA/Water Ru Water <10 88 86 Example II-93C₈H₁₇NH₂ 1 PGMEA Ru iPA <10 90 90 Example II-94 C₈H₁₇NH₂ 1 iPA Ru iPA<10 92 92 Example II-95 C₈H₁₇NH₂ 1 DGEEA Ru iPA <10 90 90 Example II-96C₈H₁₇NH₂ 1 DGEEA/Water Ru iPA <10 88 88 Comparative (CH₃)₃SiN(CH₃)₂ 5PGMEA TiN Water <10 18 <10 Example II-1

Comparative Example II-1

A mixture of: 5 g of N,N-dimethylaminotrimethylsilane [(CH₃)₃SiN(CH₃)₂]that serves as a protecting film forming agent; and 95 g of PGMEA thatserves as a solvent was stirred for about 5 minutes thereby obtaining aliquid chemical having a protecting film forming agent concentration of5 mass %. The procedure of Example II-2 was repeated with the exceptionthat this liquid chemical was used as the liquid chemical for forming aprotecting film.

As a result of evaluating the wafer having the titanium nitride filmwhich wafer was obtained upon being subjected to the surface treatmentin the first batch, in a manner discussed in the above [Evaluation ofContact Angle of Protecting Film formed on Wafer Surface] section, awafer in which an initial contact angle before the surface treatment wassmaller than 10° was confirmed to have a contact angle of 18° after thesurface treatment, as shown in Table 5. With this, it was confirmed thata water-repellency-imparting effect was not sufficient. Additionally, awafer obtained upon being subjected to the surface treatment in thefifth batch had a contact angle of smaller than 10°, in other words, acontact angle equal to the initial one, which did not exhibit thewater-repellency-imparting effect. Therefore, it was confirmed that thisliquid chemical was not reusable.

EXPLANATION OF REFERENCE NUMERALS

-   -   1 Wafer    -   2 Uneven pattern of a surface of the wafer    -   3 Projected portions of the pattern    -   4 Recessed portions of the pattern    -   5 Widths of the recessed portions    -   6 Heights of the projected portions    -   7 Widths of the projected portions    -   8 Liquid chemical for forming a protecting film, retained in the        recessed portions 4    -   9 Liquid retained in the recessed portions 4    -   10 Protecting film

The invention claimed is:
 1. A liquid chemical for forming a waterrepellent protecting film, the liquid chemical for forming a waterrepellent protecting film being for forming a water repellent protectingfilm on a wafer having at its surface an uneven pattern and containingat least one kind of element selected from the group consisting oftitanium, tungsten, aluminum, copper, tin, tantalum and ruthenium atsurfaces of recessed portions of the uneven pattern, the water repellentprotecting film being formed at least on the surfaces of the recessedportions, the liquid chemical comprising: a water repellent protectingfilm forming agent; and water, wherein the concentration of the waterrelative to the total quantity of a solvent contained in the liquidchemical is not smaller than 50 mass %, and wherein the water repellentprotecting film forming agent is C₆F₁₃C₂H₄P(O)(OH)₂.
 2. The liquidchemical for forming a water repellent protecting film, as claimed inclaim 1, wherein an upper limit of the concentration of the waterrepellent protecting film forming agent relative to the total quantityof the liquid chemical is 1 mass %.
 3. The liquid chemical for forming awater repellent protecting film, as claimed in claim 1, wherein theconcentration of the water repellent protecting film forming agentrelative to the total quantity of the liquid chemical is 0.001 to 1 mass%.
 4. The liquid chemical for forming a water repellent protecting film,as claimed in claim 1, wherein the concentration of the water repellentprotecting film forming agent relative to the total quantity of theliquid chemical is 0.0005 to 1 mass %.
 5. The liquid chemical forforming a water repellent protecting film, as claimed in claim 1,wherein the concentration of the water repellent protecting film formingagent relative to the total quantity of the liquid chemical is 0.0005 to0.8 mass %.
 6. The liquid chemical for forming a water repellentprotecting film, as claimed in claim 1, wherein the solvent is water ora liquid mixture containing water and at least one selected from thegroup consisting of esters, ethers, ketones, and polyalcohols having nohydroxyl group.